Method for fabricating semiconductor structure
US-2017047284-A1 · Feb 16, 2017 · US
US9773612B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9773612-B2 |
| Application number | US-201514675657-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 31, 2015 |
| Priority date | Oct 30, 2013 |
| Publication date | Sep 26, 2017 |
| Grant date | Sep 26, 2017 |
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A method of fabricating in-plane or out-of-plane thin-film multi-axial magnetic anisotropy devices is provided that includes either depositing a magnetic material with perpendicular or partially perpendicular anisotropy patterned into a multi-directional, curved, or closed path or depositing a thin-film of magnetic material on a piezoelectric material, where the magnetic material is arranged in a pattern, depositing excitation electrodes on the piezoelectric material, where the excitation electrodes are arranged in a pattern, biasing the piezoelectric material, by applying a voltage across the excitation electrodes, where an electric field through the piezoelectric material is generated by the applied voltage across the excitation electrodes, where the piezoelectric material is biased by the electric field to provide stress to the magnetic material, where the stress rotates a magnetization of the magnetic material, and patterning the magnetic material into a multi-directional, curved, or closed path.
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What is claimed: 1. A method of fabricating a thin-film multi-axial magnetic anisotropy device, comprising: a) depositing a thin-film of magnetic material on a piezoelectric material, wherein said magnetic material is arranged in a pattern; b) depositing excitation electrodes on said piezoelectric material, wherein said excitation electrodes are arranged in a pattern; and c) biasing said piezoelectric material, by applying a voltage across said excitation electrodes, wherein an electric field through said piezoelectric material is generated by said applied voltage across said excitation electrodes, wherein said piezoelectric material is biased by said electric field to provide stress to said magnetic material, wherein said stress rotates a magnetization of said magnetic material, wherein a multi-axial magnetic anisotropic pattern is formed, wherein said multi-axial magnetic anisotropic pattern comprises an open pattern or a closed pattern that is disposed along a multi-directional contour, a curved contour, or a closed contour. 2. The method according to claim 1 , wherein said rotation of said magnetization is up to degrees 90 in the plane of said magnetic material thin-film or out of the plane of said magnetic material thin-film. 3. The method according to claim 1 , wherein said piezoelectric material is selected from the group consisting of PZT, PbTiO 3 , AN, BaTiO 3 , PVDF, PMN, PMN-PT, PZN-PT, and PLZT. 4. The method according to claim 1 , wherein said magnetic material is selected from the group consisting of cobalt, iron, or nickel based alloys. 5. The method according to claim 4 , wherein said magnetic material is formed by alternating layers of said magnetic material and an insulating material selected from the group consisting of oxides, nitrides, and carbides. 6. The method according to claim 1 , wherein said multi-axial magnetic anisotropic pattern further is disposed along contours selected from the group consisting of, parallel, square, rectangular, diamond, honeycomb, rhomboidal, trapezoidal, annular, ellipsoidal, oval, and circular. 7. The method according to claim 1 , wherein said thin-film multi-axial magnetic anisotropy device comprises a stack of alternating layers of said piezoelectric material and said magnetic material. 8. The method according to claim 1 , wherein said electrodes are disposed on a side, a top or a bottom of said thin-film multi-axial magnetic anisotropy device.
Electricity · mapped topic
for applying magnetic films to substrates · CPC title
Electricity · mapped topic
for manufacturing cores, coils, or magnets (H01F41/14 takes precedence; for dynamo-electric machines H02K15/00) · CPC title
Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00) · CPC title
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