Perpendicularly magnetized thin film structure and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9355669-B2
Application number	US-201213678856-A
Country	US
Kind code	B2
Filing date	Nov 16, 2012
Priority date	Nov 18, 2011
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L1 0 -crystalline structure, and iii) a metal oxide layer located on the magnetic layer.

First claim

What is claimed is:

1. A perpendicularly magnetized thin film structure comprising:
a base layer;
a magnetic layer located on the base layer and having an L1 0 -crystalline structure; and
a metal layer located on the magnetic layer, wherein only a surface of the metal layer is oxidized into a metal oxide layer and a part of the metal layer adjacent to the magnetic layer remains in a metal state without being oxidized, and wherein the metal oxide layer contains at least one metal oxide selected from a group of Cr 2 O 3 , ZrO 2 , ZnO, Cu 2 O, and NiO,
wherein the magnetic layer contains boron above 0 and not more than 50 at % and the metal oxide layer contains B 2 O 3 .

2. The perpendicularly magnetized thin film structure of claim 1 , wherein the metal oxide layer further contains at least one of metal oxide selected from a group of TiO 2 , Ta 2 O 5 , and Al 2 O 3 .

3. The perpendicularly magnetized thin film structure of claim 1 , wherein the magnetic layer contains a compound having a chemical formula of A 100-x B x , the A is at least one element selected from a group of Fe(iron), Co(cobalt), Ni(nickel), Mn(manganese) or Cr(chromium), the B is at least one element selected from a group of Pt(platinum), Pd(palladium), Ni(nickel), Rh(rhodium), Au(gold), Hg(mercury) or Al(aluminum), and the x is 25 at % to 75 at %.

4. The perpendicularly magnetized thin film structure of claim 3 , wherein the x is 40 at % to 60 at %.

5. The perpendicularly magnetized thin film structure of claim 1 , further comprising an insulating layer located between the base layer and the magnetic layer.

6. The perpendicularly magnetized thin film structure of claim 5 , wherein the insulating layer includes an MgO layer and the thickness of the MgO layer is 2 nm or less.

7. The perpendicularly magnetized thin film structure of claim 5 , wherein the base layer includes a magnetic layer.

8. The perpendicularly magnetized thin film structure of claim 7 , wherein the magnetic layer of the base layer is made of at least one compound selected from a group of FePtB and CoPtB.

9. The perpendicularly magnetized thin film structure of claim 5 , further comprising another magnetic layer located between the insulating layer and the magnetic layer, having a BCC (Body Centered Cubic) crystalline structure, and containing at least one material selected from a group of CoFeB, CoFe and Fe.

10. The perpendicularly magnetized thin film structure of claim 5 , further comprising an electrode layer located on the metal oxide layer and the thickness of the metal oxide layer s smaller than the thickness of the magnetic layer.

11. A method of manufacturing a perpendicularly magnetized thin film structure, comprising:
providing a base layer;
providing a magnetic layer on the base layer;
providing a metal layer on the magnetic layer; and
annealing the base layer, the magnetic layer, and the metal layer in a partial oxygen pressure,
wherein the annealing temperature is 400° C. to 900° C. and wherein the partial oxygen pressure in the annealing is 10 −10 bar to 1 bar, wherein, in the annealing, the magnetic layer is transformed to have an L1 0 -crystalline structure by tensile stress applied in parallel with the surface of the magnetic layer by the metal layer which is transformed into a metal oxide, the c axis of the magnetic layer is aligned perpendicular to the direction in which the film plane of the magnetic layer is extended, and the metal layer is transformed into a metal oxide layer.

12. The method of claim 11 , wherein only a surface of the metal layer is oxidized into the metal oxide layer and a part of the metal layer adjacent to the magnetic layer remains in a metal state without being oxidized.

13. The method of claim 11 , further comprising:
providing an insulating layer between the base layer and the magnetic layer,
wherein, in the annealing, the insulating layer is annealed together with the base layer, the magnetic layer, and the metal layer.

14. The method of claim 13 , further comprising:
providing another magnetic layer between the insulating layer and the metal layer,
wherein, in the annealing, the magnetic layer is annealed together with the base layer, the insulating layer, the magnetic layer, and the metal layer.

15. The method of claim 11 , further comprising
reducing the thickness of the metal oxide layer after the annealing; and
providing an electrode layer on the metal oxide layer.

16. The method of claim 15 , wherein the reducing of the thickness of the metal oxide layer partially removes the metal oxide layer by performing argon on milling, reactive ion etching, or chemical-mechanical planarization on the metal oxide layer.

17. A method of manufacturing a perpendicularly magnetized thin film structure, the method comprising:
forming a magnetic layer on a base layer such that the magnetic layer exhibits a magnetic easy direction in parallel to a surface between the magnetic layer and the base layer;
depositing a metal layer on the magnetic layer; and
annealing in a partial oxygen pressure the base layer, the magnetic layer, and the metal layer which oxidizes only a surface of the metal layer to form a metal oxide layer such that a part of the metal layer adjacent to the magnetic layer remains in a metal state without being oxidized and ensures perpendicular magnetic anisotropy of the magnetic layer as a result of oxidizing only a surface of the metal layer to form a metal oxide layer that transforms a phase of the magnetic layer into a L1 0 -crystalline phase structure; and
wherein annealing is performed between 400° C. to 900° C. and the partial oxygen pressure in the annealing is between 10 −10 bar to 1 bar,
wherein, as a result of annealing, the magnetic layer is transformed to have an L1 0 -crystalline structure by tensile stress applied in parallel with the surface of the magnetic layer by the metal layer which is transformed into a metal oxide, the c axis of the magnetic layer is aligned perpendicular to the direction in which the film plane of the magnetic layer is extended, and the metal layer is transformed into a metal oxide layer.

18. The method of claim 17 , further comprising:
providing an insulating layer located between the base layer and the magnetic layer; and
forming an electrode layer on the metal oxide layer.

19. The method of claim 18 , wherein
the metal oxide layer is selected from a group of TiO 2 , Ta 2 O 5 , Al 2 O 3 , Cr 2 O 3 , ZrO 2 , ZnO, Cu 2 O, and NiO;
the insulating layer includes an MgO layer and the thickness of the MgO layer is 2 nm or less; and
the magnetic layer contains a compound having a chemical formula of A 100-x B x , the A is at least one element selected from a group of Fe(iron), Co(cobalt), Ni(nickel), Mn(manganese) or Cr(chromium), the B is at least one element selected from a group of Pt(platinum), Pd(palladium), Ni(nickel), Rh(rhodium), Au(gold), Hg(mercury) or Al(aluminum), and the x is 25 at % to 75 at %.

Assignees

• Korea Inst Sci & Tech

Inventors

• Choi Gyung Min
• Min Byoung Chul
• Shin Kyung Ho

Classifications

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F41/32

  for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

• G11B5/84

  Processes or apparatus specially adapted for manufacturing record carriers · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/123

  having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films · CPC title