Substrate treatment method and substrate treatment apparatus

Patent metadata

Field	Value
Publication number	US-9768011-B2
Application number	US-201314075623-A
Country	US
Kind code	B2
Filing date	Nov 8, 2013
Priority date	Nov 8, 2012
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a rinse liquid to the upper surface of a substrate so that rinse liquid adhering to the upper surface of the substrate is replaced with the organic solvent; a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined temperature higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form a liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate.

First claim

What is claimed is:

1. A substrate treatment method comprising:
a rinsing step of supplying a rinse liquid to an upper surface of a substrate formed with a minute pattern, the substrate being horizontally held by a substrate holding unit;
an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than the rinse liquid to the upper surface of the substrate held by the substrate holding unit to form a liquid film of the organic solvent on the upper surface so that rinse liquid adhering to the upper surface of the substrate including a gap of the minute pattern is replaced with the organic solvent;
a higher temperature maintaining step of maintaining the upper surface of the substrate held by the substrate holding unit at a predetermined temperature higher than a boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form the liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and
an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate held by the substrate holding unit,
wherein the organic solvent is additionally supplied to the organic solvent liquid film in the higher temperature maintaining step.

2. The substrate treatment method according to claim 1 , wherein the organic solvent removing step is started before the higher temperature maintaining step ends.

3. The substrate treatment method according to claim 1 , wherein the temperature of the upper surface of the substrate in the higher temperature maintaining step is set such that the organic solvent liquid film is prevented from boiling in the higher temperature maintaining step.

4. The substrate treatment method according to claim 1 , wherein the predetermined higher temperature is higher by 10° C. to 50° C. than the boiling point of the organic solvent.

5. The substrate treatment method according to claim 1 , wherein at least one of the substrate temperature in the higher temperature maintaining step and a duration of the higher temperature maintaining step is set such that a gas-phase organic solvent of the organic solvent gas film is prevented from cleaving through the organic solvent liquid film to above the organic solvent liquid film.

6. The substrate treatment method according to claim 1 , wherein a thickness of the organic solvent liquid film in the higher temperature maintaining step is set such that the organic solvent liquid film is prevented from being split in the higher temperature maintaining step.

7. The substrate treatment method according to claim 1 , wherein a thickness of the organic solvent liquid film in the higher temperature maintaining step is set to 1 to 5 mm at a center of the substrate.

8. The substrate treatment method according to claim 1 ,
wherein the higher temperature maintaining step is the step of, while rotating the substrate held by the substrate holding unit, maintaining the upper surface of the substrate at the predetermined higher temperature, wherein a rotation speed of the substrate in the higher temperature maintaining step is set to 10 to 500 rpm.

9. The substrate treatment method according to claim 1 , wherein the organic solvent supplying step is performed when a temperature of the upper surface of the substrate held by the substrate holding unit is lower than the boiling point of the organic solvent.

10. The substrate treatment method according to claim 1 , wherein the higher temperature maintaining step includes the step of heating the substrate held by the substrate holding unit by a heater disposed below the substrate.

11. The substrate treatment method according to claim 1 , further comprising a spin drying step of rotating the substrate held by the substrate holding unit to dry the substrate after the organic solvent removing step.

12. The substrate treatment method according to claim 1 , wherein the organic solvent removing step includes the step of spouting a gas toward a rotation center of the upper surface of the substrate held by the substrate holding unit while rotating the substrate.

13. The substrate treatment method according to claim 1 , wherein the organic solvent removing step includes the step of spraying a gas in the form of zone stream toward the upper surface of the substrate held by the substrate holding unit while moving a gas applying zone over the upper surface of the substrate.

14. The substrate treatment method according to claim 1 , wherein the organic solvent removing step includes the step of tilting the substrate held by the substrate holding unit with respect to a horizontal plane.

15. The substrate treatment method according to claim 1 , wherein the organic solvent removing step includes the step of heating the substrate held by the substrate holding unit sequentially from a center portion of the substrate to a peripheral portion of the substrate.

16. The substrate treatment method according to claim 1 , wherein the organic solvent liquid film is not boiled in the higher temperature maintaining step.

17. The substrate treatment method according to claim 1 , wherein the organic solvent removing step includes a step of removing the organic solvent liquid film in the form of liquid mass from above the upper surface of the substrate.

Assignees

• Dainippon Screen Mfg
• Screen Holdings Co Ltd

Inventors

• Okutani Manabu

Classifications

• H10P72/7626

  characterised by the construction of the shaft · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title