Piezoresistive pressure sensor device

Patent metadata

Field	Value
Publication number	US-9764947-B2
Application number	US-201514931034-A
Country	US
Kind code	B2
Filing date	Nov 3, 2015
Priority date	Nov 25, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

The voltages output from a low-pressure MEMS sensor are increased by increasing the sensitivity of the sensor. Sensitivity is increased by thinning the diaphragm of the low pressure sensor device. Nonlinearity increased by thinning the diaphragm is reduced by simultaneously creating a cross stiffener on the top side of the diaphragm. An over-etch of the top side further increases sensitivity.

First claim

The invention claimed is:

1. A pressure sensing element comprising:
a first substrate having top and bottom opposing sides;
a diaphragm formed into the bottom of the first substrate and into the top of the first substrate, the diaphragm having top and bottom opposing sides, the bottom side of the diaphragm having a square first area and a first outer perimeter, the top side of the first substrate having a second area and a second outer perimeter inner portions of which form the top side of the diaphragm above the first area and the first perimeter, outer portions of the second area and the second perimeter extending out along the top side of the first substrate further than the first area and the first perimeter extend along the bottom side of the first substrate, the top side of the diaphragm comprising spaced-apart piezoresistors which are coupled to each other to form a Wheatstone bridge; and
a cross-stiffener, formed into the top side of the diaphragm, the piezoresistors being formed in portions of the top side from which the cross-stiffener is formed and located inside the second perimeter and proximate to the first perimeter.

2. The pressure sensing element of claim 1 , wherein the cross stiffener comprises:
first and second orthogonal beam sections, which are formed from part of the top of the diaphragm, each beam section having first and second opposing ends; and
anchors, formed as part of the top of the diaphragm and located at each end of both beam sections, wherein the piezoresistors are formed into the anchors.

3. The pressure sensing element of claim 1 , wherein the second outer perimeter is a non-square closed polygon.

4. The pressure sensing element of claim 2 , wherein the second outer perimeter is a non-square closed polygon.

5. The pressure sensing element of claim 1 , wherein the diaphragm formed into the bottom of the first substrate has a sidewall, which is inclined.

6. The pressure sensing element of claim 1 , wherein the diaphragm formed into the bottom of the first substrate has a sidewall, which is vertical.

7. The pressure sensing element of claim 1 , wherein the diaphragm has a thickness between about 1.5 and about 5.0 microns and wherein the cross stiffener has a different thickness, which is between about 5.0 and about 15.0 microns.

8. The pressure sensing element of claim 1 , further comprising a second substrate attached to the bottom of the first substrate.

9. The pressure sensing element of claim 1 , further comprising a second substrate attached to the bottom of the first substrate, the second substrate having a hole, which is aligned with the diaphragm and configured to conduct a fluid toward the bottom side of the diaphragm.

10. The pressure sensing element of claim 9 , further comprising a cap that covers the top side of the diaphragm and which defines a cavity above the top side of the diaphragm.

11. The pressure sensing element of claim 1 , further comprising a Wheatstone bridge circuit with symmetric interconnectors.

12. The pressure sensing element of claim 1 , further comprising at least one protecting film in at least one cavity.

13. A pressure sensor comprising:
a housing having a pocket;
an application-specific integrated circuit within the pocket; and
a pressure sensing element located in the pocket and coupled to the integrated circuit, the pressure sensing element comprising:
a first substrate having top and bottom opposing sides;
a diaphragm formed into the bottom of the first substrate and into the top of the first substrate, the diaphragm having top and bottom opposing sides, the bottom side of the diaphragm having a square first area and a first outer perimeter, the top side of the first substrate having a second area and a second outer perimeter inner portions of which form the top side of the diaphragm above the first area and the first perimeter, outer portions of the second area and the second perimeter extending out along the top side of the first substrate further than the first area and the first perimeter extend along the bottom side of the first substrate, the top side of the diaphragm comprising spaced-apart piezoresistors which are coupled to each other to form a Wheatstone bridge; and
a cross-stiffener, formed into the top side of the diaphragm, the piezoresistors being formed in portions of the top side from which the cross-stiffener is formed and located outside the second perimeter and proximate to the first perimeter.

14. A method of forming a pressure sensing element, the method comprising:
forming an epitaxial layer on a top side of a silicon substrate;
performing a first etch on the top side of the epitaxial layer, the first etch forming a cross stiffener from the epitaxial layer; and
performing a second etch on the bottom side of the silicon substrate to form a cavity in the silicon substrate, the first and second etching steps forming a diaphragm in the silicon substrate such that the second etch defines a second area and a second perimeter that define a bottom of the diaphragm and such that the first etch extends over a first area and a first perimeter that are greater than the second area and the second perimeter.

15. The method of claim 14 , further comprising: performing a corner rounding etch step in the cavity after the second etch step, the corner rounding etch step comprising a dry etch, which rounds interior corners formed by the second etch step.

16. The method of claim 14 , wherein the step of performing a second etch defines a diaphragm thickness between about 1.5 and 5.0 microns and defines cross stiffener thickness between about 5.0 and about 15.0 microns.

17. The method of claim 14 , further comprising: attaching the substrate to a pedestal, which supports the substrate.

18. The method of claim 14 , further comprising: attaching the substrate to a pedestal having a hole aligned with the diaphragm, the hole allowing a fluid to be applied to the diaphragm.

19. The method of claim 18 , further comprising: attaching a cap to the top side of the substrate, the cap defining a cavity above the top side of the diaphragm.

Assignees

• Continental automotive systems inc

Inventors

• Chiou Jen-Huang Albert
• Chen Shiuh-Hui Steven

Classifications

• G01L9/0047

  Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness · CPC title

• G01L9/0045

  Diaphragm associated with a buried cavity · CPC title

• G01L9/0044 Primary

  Constructional details of non-semiconductive diaphragms · CPC title

• G01L9/0054 Primary

  integral with a semiconducting diaphragm · CPC title

• B81C1/00158 Primary

  Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D67/0039) · CPC title