Planar cavity MEMS and related structures, methods of manufacture and design structures

Patent metadata

Field	Value
Publication number	US-9764944-B2
Application number	US-201514840434-A
Country	US
Kind code	B2
Filing date	Aug 31, 2015
Priority date	Jun 25, 2010
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

First claim

What is claimed:

1. A structure, comprising:
a first cavity structure with discrete wires and a beam structure;
an insulator layer at least partially surrounding the first cavity;
an electrode on the insulator layer;
a second cavity formed over the beam structure and surrounded by a lid material, which also covers the electrode;
sealed vent holes in the lid material that were previously open to at least the second cavity; and
a final via formed within the lid material and which extends to the electrode, the final via having an upper cross section larger than a lower cross section, wherein the electrode is remote from the first cavity and the second cavity.

2. The structure of claim 1 , wherein the upper cross section of the final via is lined with at least dielectric material and a nitride cap material.

3. The structure of claim 1 , wherein the final via includes a first cross section and a second cross section of different dimensions than the first cross section.

4. The structure of claim 1 , wherein the beam structure and the second cavity are remote from the electrode.

5. The structure of claim 4 , further comprising a vent hole over the beam structure.

6. The structure of claim 5 , wherein the vent hole is rounded or chamfered.

7. The structure of claim 6 , wherein the vent hole is chamfered at a 45 degree angle.

8. The structure of claim 5 , wherein the vent hole is octagonal.

9. The structure of claim 1 , wherein the lid material comprises dielectric material.

10. The structure of claim 9 , further comprising a nitride cap over the lid material.

11. The structure of claim 10 , further comprising a polymide material on the nitride cap.

12. The structure of claim 1 , wherein the final via has a tapered angle.

Assignees

• IBM

Inventors

• Herrin Russell T
• Maling Jeffrey C
• Stamper Anthony K

Classifications

• Y10T29/435

  Solid dielectric type · CPC title

• B81C2201/0109

  Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108 · CPC title

• Y10T29/49002

  Electrical device making · CPC title

• Y10S438/937

  Hillock prevention · CPC title

• Y10T29/4913

  Assembling to base an electrical component, e.g., capacitor, etc. · CPC title