Anion exchange methods using anion exchange precursor

Patent metadata

Field	Value
Publication number	US-9764320-B2
Application number	US-201514802696-A
Country	US
Kind code	B2
Filing date	Jul 17, 2015
Priority date	Jul 18, 2014
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

An anion exchange method using an anion exchange precursor based on a metal-chalcogenide compound is provided. The anion exchange method includes exchanging an anionic element of a nanoparticle with an element X of an anion exchange precursor represented by Na 2 X n via a reaction between the anion exchange precursor and the nanoparticle in the presence of a reaction medium, wherein X is at least one element selected from the group consisting of Se, S, and Te, and n is an integer from 2 to 10.

First claim

What is claimed is:

1. An anion exchange method comprising:
exchanging an anionic element of a nanoparticle with an element X of an anion exchange precursor represented by Na 2 X n via a reaction between the anion exchange precursor and the nanoparticle in the presence of a reaction medium, wherein X is at least one element selected from the group consisting of Se, S, and Te, and n is an integer from 2 to 10,
wherein the nanoparticle is CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, SiC, or a combination thereof; or comprises the anionic element and Si, Ge, or SiGe.

2. The anion exchange method of claim 1 , wherein an anion exchange reaction occurs on the surface of the nanoparticle, or occurs on the surface of and inside of the nanoparticle.

3. The anion exchange method of claim 1 , wherein n is an integer of 2 to 5.

4. The anion exchange method of claim 1 , wherein the nanoparticle is a quantum dot, a metal nanocrystal (NC) comprising the anionic element, a magnetic nanocrystal, an oxide nanocrystal, a nanowire, or a nanoplate.

5. The anion exchange method of claim 1 , wherein the nanoparticle is present in an amount of from about 100 parts by weight to about 10,000,000 parts by weight based on 100 parts by weight of the anion exchange precursor.

6. The anion exchange method of claim 1 , wherein the reaction medium comprises at least one polar solvent.

7. The anion exchange method of claim 6 , wherein the polar solvent comprises water, dimethylformamide (DMF), dimethylsulfoxide (DMSO), ethanolamine, formamide, hydrazine hydrate, acetonitrile, or a combination thereof.

8. The anion exchange method of claim 1 , wherein the reaction medium is present in an amount of from about 10,000 parts by weight to about 10,000,000,000 parts by weight based on 100 parts by weight of the anion exchange precursor.

9. A method of preparing a nanoparticle, the method comprising:
preparing a second nanoparticle by exchanging an anionic element of a first nanoparticle with an element X of an anion exchange precursor represented by Na 2 X n via a reaction between the anion exchange precursor and the first nanoparticle in the presence of a reaction medium, wherein X is at least one element selected from the group consisting of Se, S, and Te, and n is an integer from 2 to 10,
wherein the nanoparticle is CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, SiC, or a combination thereof; or comprises the anionic element and Si, Ge, or SiGe.

Assignees

• Samsung Electronics Co Ltd
• Ajou Univ Industry-Academic Coop Found

Inventors

• Cho Kyungsang
• Kim Sangwook
• Choi Donghyeok

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• B01J41/02 Primary

  Processes using inorganic exchangers · CPC title

• H01L21/02601

  Electricity · mapped topic

• B01J41/10

  Inorganic material · CPC title