Sputtering Target And Method For Production Thereof
US-2016126072-A1 · May 5, 2016 · US
Indium sputtering target and method for manufacturing same
US9758860B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9758860-B2 |
| Application number | US-201213819499-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 15, 2012 |
| Priority date | Jan 5, 2012 |
| Publication date | Sep 12, 2017 |
| Grant date | Sep 12, 2017 |
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- Title
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Abstract
Official abstract text for this publication.
An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm prior to sputtering.
First claim
Opening claim text (preview).
What is claimed is: 1. An indium metal sputtering target having purity of 99.99 mass % or more and having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm in advance of sputtering time. 2. An indium metal sputtering target having purity of 99.99 mass % or more and having a surface to be sputtered with a ten point average roughness Rzjis of from 100 μm to 400 μm in advance of sputtering time. 3. The indium metal sputtering target according to claim 1 , wherein a decrease in film deposition rate after ten hours is 30% or less compared with an initial film deposition rate. 4. A method of manufacturing an indium metal sputtering target according to claim 1 , comprising a step of treating a surface to be sputtered using dry ice particle blasting. 5. A method of manufacturing an indium metal sputtering target according to claim 2 , comprising a step of treating a surface to be sputtered using dry ice particle blasting. 6. A method of manufacturing an indium metal sputtering target according to claim 3 , comprising a step of treating a surface to be sputtered using dry ice particle blasting. 7. The indium metal sputtering target according to claim 2 , wherein a decrease in film deposition rate after ten hours is 30% or less compared with an initial film deposition rate. 8. A method of manufacturing an indium metal sputtering target according to claim 1 , comprising a step of treating a surface to be sputtered using an abrasive paper having a grain size of #60 or greater. 9. A method of manufacturing an indium metal sputtering target according to claim 2 , comprising a step of treating a surface to be sputtered using an abrasive paper having a grain size of #60 or greater. 10. A method of manufacturing an indium metal sputtering target according to claim 3 , comprising a step of treating a surface to be sputtered using an abrasive paper having a grain size of #60 or greater. 11. A method of manufacturing an indium metal sputtering target according to claim 8 , wherein the abrasive paper has a grain size of from #60 to 400. 12. A method of manufacturing an indium metal sputtering target according to claim 9 , wherein the abrasive paper has a grain size of from #60 to 400. 13. A method of manufacturing an indium metal sputtering target according to claim 10 , wherein the abrasive paper has a grain size of from #60 to 400.
Assignees
Inventors
Classifications
Material · CPC title
Targets · CPC title
- C23C14/3414Primary
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Shape · CPC title
Manufacturing of targets · CPC title
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9758860B2 cover?
- An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm prior to sputtering.
- Who is the assignee on this patent?
- Endo Yousuke, Sakamoto Masaru, Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 12 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).