Power amplifier modules including tantalum nitride terminated through wafer via and related systems, devices, and methods

Patent metadata

Field	Value
Publication number	US-9755592-B2
Application number	US-201615260015-A
Country	US
Kind code	B2
Filing date	Sep 8, 2016
Priority date	Jun 14, 2012
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof.

First claim

What is claimed is:

1. A power amplifier module comprising:
a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a front side of a semiconductor substrate and a p-type field effect transistor on the front side of the semiconductor substrate, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the p-type field effect transistor including a semiconductor portion of the semiconductor material, the semiconductor portion corresponding to a channel of the p-type field effect transistor;
a tantalum nitride terminated through wafer via; and
a conductive layer on a back side of the semiconductor substrate that is opposite the front side of the semiconductor substrate, the conductive layer being electrically connected to the power amplifier by way of a metal layer in the tantalum nitride terminated through wafer via.

2. The power amplifier module of claim 1 wherein the heterojunction bipolar transistor includes a second collector layer of a second semiconductor material and the p-type field effect transistor includes a second semiconductor portion of the second semiconductor material.

3. The power amplifier module of claim 1 wherein the heterojunction bipolar transistor includes a base and an etch stop disposed between the collector layer and the base.

4. The power amplifier module of claim 1 further comprising an n-type field effect transistor on the front side of the semiconductor substrate, the heterojunction bipolar transistor including an emitter stack, the n-type field effect transistor including a semiconductor portion of the same material as a layer of the emitter stack, and the semiconductor portion of the n-type field effect transistor corresponding to a channel of the n-type field effect transistor.

5. The power amplifier module of claim 1 wherein the metal layer is a copper layer, and a tantalum nitride termination of the tantalum nitride terminated through wafer via is configured to inhibit diffusion of copper from the copper layer into the semiconductor substrate.

6. The power amplifier module of claim 1 wherein the conductive layer includes copper and is configured as a ground plane.

7. The power amplifier module of claim 1 wherein the semiconductor substrate is a gallium arsenide substrate.

8. The power amplifier module of claim 7 wherein the metal layer is a copper layer.

9. The power amplifier module of claim 8 wherein a tantalum nitride termination of the tantalum nitride terminated through wafer via surrounds an interface between the copper layer and a metallization layer on the front side of gallium arsenide substrate.

10. The power amplifier module of claim 7 wherein the gallium arsenide substrate has a thickness of less than 200 microns.

11. A power amplifier module comprising:
a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a front side of a semiconductor substrate and a field effect transistor on the front side of the semiconductor substrate, the heterojunction bipolar transistor including a collector layer of a semiconductor material, and the field effect transistor including a semiconductor portion of the semiconductor material corresponding to a channel of the field effect transistor;
a through wafer via extending through the semiconductor substrate and having a tantalum nitride termination on the front side of the semiconductor substrate; and
a conductive layer on a back side of the semiconductor substrate, the conductive layer being electrically connected to the power amplifier by way of a metal layer in the through wafer via.

12. The power amplifier module of claim 11 wherein the semiconductor material is p-type gallium arsenide.

13. The power amplifier module of claim 11 wherein the heterojunction bipolar transistor includes a second collector layer of a second semiconductor material and the field effect transistor includes a second semiconductor portion of the second semiconductor material.

14. The power amplifier module of claim 13 wherein the semiconductor material is a p-type semiconductor material and the second semiconductor material is an n-type semiconductor material.

15. The power amplifier module of claim 11 wherein the metal layer is a copper layer.

16. The power amplifier module of claim 15 wherein the tantalum nitride termination is configured to inhibit diffusion of copper from the copper layer into the semiconductor substrate.

17. A power amplifier module comprising:
a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor on a front side of a gallium arsenide substrate and a p-type field effect transistor on the front side of the gallium arsenide substrate, the heterojunction bipolar transistor including a collector layer of p-type gallium arsenide and an emitter, and the p-type field effect transistor including a p-type gallium arsenide portion corresponding to a channel of the p-type field effect transistor;
a ground plane on a back side of the gallium arsenide substrate that is opposite the front side of the gallium arsenide substrate; and
a through wafer via extending through the gallium arsenide substrate, the through wafer via having a copper layer therein and a tantalum nitride termination on the front side of the gallium arsenide substrate, the emitter of the heterojunction bipolar transistor being electrically connected to the ground plane by way of the copper layer.

18. The power amplifier module of claim 17 wherein the heterojunction bipolar transistor includes a second collector layer of n-type gallium arsenide and the p-type field effect transistor includes an n-type gallium arsenide portion.

19. The power amplifier module of claim 17 further comprising an etch stop disposed between the collector layer of the heterojunction bipolar transistor and a base of the heterojunction bipolar transistor.

20. The power amplifier module of claim 17 wherein the tantalum nitride termination surrounds an interface between the copper layer and a metallization layer on the front side of gallium arsenide substrate.

Assignees

• Skyworks Solutions Inc

Inventors

• Zampardi Jr Peter J
• Sun Hsiang-Chih
• Shen Hong
• Janani Mehran
• Riege Jens Albrecht

Classifications

• H10W42/276

  the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title