Method for forming projections and depressions, sealing structure, and light-emitting device

Patent metadata

Field	Value
Publication number	US-9755189-B2
Application number	US-201615211444-A
Country	US
Kind code	B2
Filing date	Jul 15, 2016
Priority date	Apr 19, 2013
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.

First claim

What is claimed is:

1. A sealing structure comprising:
a substrate;
a sealing substrate opposite a surface of the substrate;
a sealant between the substrate and the sealing substrate; and
a sealed structure sealed in a region surrounded by the substrate, the sealing substrate, and the sealant,
wherein the surface of the substrate is provided with:
projections and depressions;
a surface being adjacent to the projections and depressions and being flatter and smoother than the projections and depressions; and
a metal film in contact with the flat and smooth surface,

wherein the sealant is in contact with the projections and depressions, and
wherein the metal film comprises metal elements non-uniformly distributed.

2. The sealing structure according to claim 1 ,
wherein a surface of the sealing substrate is provided with:
projections and depressions;
a surface being adjacent to the projections and depressions of the sealing substrate and being flatter and smoother than the projections and depressions of the sealing substrate; and
a second film overlapping the flat and smooth surface.

3. The sealing structure according to claim 2 ,
wherein the sealant is in contact with the second film which the sealing substrate is provided with.

4. The sealing structure according to claim 2 ,
wherein the substrate comprises at least one of glass, ceramics, a metal, an inorganic material, and a resin.

5. The sealing structure according to claim 2 ,
wherein the sealing substrate comprises at least one of glass, ceramics, a metal, an inorganic material, and a resin.

6. The sealing structure according to claim 2
wherein the sealant contains glass whose melting point is higher than or equal to 300° C. and lower than or equal to 700° C.

7. An electronic device comprising the sealing structure according to claim 6 .

8. The sealing structure according to claim 1 ,
wherein the metal elements comprise nickel.

9. A light-emitting device comprising:
a substrate;
a sealing substrate opposite a surface of the substrate;
a sealant between the substrate and the sealing substrate; and
a light-emitting element sealed in a region surrounded by the substrate, the sealing substrate, and the sealant,
wherein the surface of the substrate is provided with:
projections and depressions;
a surface being adjacent to the projections and depressions and being flatter and smoother than the projections and depressions
a metal film in contact with the flat and smooth surface; and
a conductive film overlapping with the surface,

wherein the light-emitting element is electrically connected to the conductive film,
wherein the sealant is adjacent to the projections and depressions, and
wherein the metal film comprises metal elements non-uniformly distributed.

10. The light-emitting device according to claim 9 ,
wherein the substrate comprises at least one of glass, ceramics, a metal, an inorganic material, and a resin.

11. The light-emitting device according to claim 9 ,
wherein the sealing substrate comprises at least one of glass, ceramics, a metal, an inorganic material, and a resin.

12. An electronic device comprising the light-emitting device according to claim 9 .

13. The light-emitting device according to claim 9 ,
wherein the metal elements comprise nickel.

Assignees

• Semiconductor Energy Lab

Inventors

• Nishido Yusuke

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• C23F1/12

  Gaseous compositions · CPC title

• C23F1/02 Primary

  Local etching · CPC title

• C23F1/44

  Compositions for etching metallic material from a metallic material substrate of different composition · CPC title