Substrate including selectively formed barrier layer

Patent metadata

Field	Value
Publication number	US-9754823-B2
Application number	US-201414288840-A
Country	US
Kind code	B2
Filing date	May 28, 2014
Priority date	May 28, 2014
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

First claim

What is claimed is:

1. A method of selectively locating a barrier layer on a substrate, the method comprising:
forming a barrier layer on a surface of the substrate, the barrier layer comprising a metal element and a non-metal element;
forming an electrically conductive film layer on the barrier layer;
forming a metallic portion in the electrically conductive film layer;
selectively ablating portions of the barrier layer from a dielectric layer after forming the metallic portion so as to form trenches that expose portions of the dielectric layer having a first height that is less than a second height of the metallic portion; forming an encapsulation layer in the exposed portions of the dielectric layer and selectively radiating the encapsulation layer based on a first thickness of the metallic portion and a second thickness of the barrier layer.

2. The method of claim 1 , wherein the barrier layer has an electrical resistivity no less than about 50 micro-ohm*cm.

3. The method of claim 2 , wherein the barrier layer is formed from a material selected from the group comprising tantalum nitride (TaN) and titanium nitride (TiN), and the substrate is formed from a dielectric material.

4. The method of claim 3 , wherein the selectively ablating portions of the barrier layer includes directing energy pulses to the barrier layer such that the barrier layer ablates from the dielectric layer in response to laser radiation and discontinuity of the underlying dielectric layer.

5. The method of claim 4 , wherein the selectively ablating portions of the barrier layer includes selectively radiating a first portion of the dielectric layer to a first temperature while radiating a second portion of the dielectric layer to a second temperature less than the first temperature.

6. The method of claim 5 , wherein the first portion of the dielectric layer is below the barrier layer and is isolated from the metallic portion, and a second portion of the dielectric layer is below the metallic portion.

7. The method of claim 1 , wherein the second thickness of the barrier layer is less than the first thickness of the metallic portion such that laser radiation is transferred via the barrier layer to dielectric layer and creates a disassociation to the dielectric layer while the metallic portion inhibits the second portion of the dielectric layer from reaching an ablation threshold.

8. The method of claim 7 , wherein the forming a metallic portion on the electrically conductive film layer further comprises:
defining at least one cavity using the conductive film layer;
filling the at least one cavity with a metal material; and
planarizing the metal material and the conductive film layer until reaching the barrier layer to form a metallic wiring region that is flush with the barrier layer.

9. The method of claim 8 , wherein the selectively ablating portions of the barrier layer includes ablating portions of the barrier layer that are isolated from the conductive film layer to re-expose a portion of the dielectric layer.

10. The method of claim 9 , further comprising:
forming the encapsulation layer on the metallic wiring region and the re-exposed portions of the dielectric layer, the encapsulation layer formed from TaN; and directing energy pulses to the encapsulation layer such that a first portion of the encapsulation layer ablates from the re-exposed portions of the dielectric layer while a second portion of the encapsulation layer is maintained and encapsulates the metallic wiring region.

Assignees

• IBM
• Suss Microtec Photonic Systems Inc
• Süss Microtec Photonic Systems Inc

Inventors

• Brovman Yuri M
• Erwin Brian M
• Polomoff Nicholas A
• Schuler Jennifer D
• Souter Matthew E
• Tessler Christopher L

Classifications

• H10W72/01971

  Cleaning, e.g. oxide removal · CPC title

• H10W72/01953

  by etching · CPC title

• H10W72/01951

  Changing the shapes of bond pads · CPC title

• H10W72/01215

  forming coatings · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title