MEMS pressure sensor with thermal compensation

Patent metadata

Field	Value
Publication number	US-9751750-B2
Application number	US-201514711766-A
Country	US
Kind code	B2
Filing date	May 13, 2015
Priority date	Jun 3, 2014
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A semiconductor device having a capacitive pressure sensor structure includes a substrate, an interlayer dielectric layer on the substrate, a bottom electrode of a pressure sensor within the interlayer dielectric layer, a pressure sensing cavity above the bottom electrode, a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer, a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film, and a high thermal expansion coefficient material layer disposed on cover layer and sidewalls of the opening. Through the use of the high thermal expansion coefficient material layer, the capacitive pressure sensor structure is not susceptible to changes in ambient temperature to enhance the sensitivity of the capacitive pressure sensor structure.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
an interlayer dielectric layer on the substrate;
a bottom electrode of a pressure sensor within the interlayer dielectric layer;
a pressure sensing cavity above the bottom electrode;
a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer;
a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film;
a high thermal expansion coefficient material layer disposed on the cover layer and sidewalls of the opening while leaving a central portion of the opening uncovered so that a central portion of the exposed portion of the sensing film remains exposed, the high thermal expansion coefficient material layer having a high thermal expansion coefficient higher than a thermal expansion coefficient of the sensing film, wherein the exposed central portion is not covered by any other layer.

2. The semiconductor device of claim 1 , wherein the sensing film comprises silicon or silicon germanium.

3. The semiconductor device of claim 1 , wherein the high thermal expansion coefficient material layer is disposed in the vicinity of a peripheral edge of the sensing film.

4. The semiconductor device of claim 1 , wherein the high thermal expansion coefficient material layer is distributed in an annular form around a peripheral edge of the sensing film.

5. The semiconductor device of claim 1 , wherein the thermal expansion coefficient of the high thermal expansion coefficient material layer is greater than 5.0 ppm/K.

6. The semiconductor device of claim 1 , wherein the high thermal expansion coefficient material layer comprises a metal material.

7. The semiconductor device of claim 6 , wherein the metal material comprises aluminum.

8. The semiconductor device of claim 1 , wherein the high thermal expansion coefficient material layer has a thickness smaller than a thickness of the sensing film.

9. The semiconductor device of claim 1 , further comprising:
a device in the substrate; and
an interconnect structure disposed on an outer periphery of the bottom electrode and comprising a first terminal connected to the device and a second terminal opposite the first terminal and connected to the sensing film.

10. The semiconductor device of claim 9 , wherein the interconnect structure comprises a plurality of metal layers connected to each other through a plurality of vias.

11. The semiconductor device of claim 10 , wherein the plurality of metal layers are made of aluminum, and the plurality of vias are made of tungsten.

12. An electronic device comprising a semiconductor device, the semiconductor device comprising:
a substrate;
an interlayer dielectric layer on the substrate;
a bottom electrode of a pressure sensor within the interlayer dielectric layer;
a pressure sensing cavity above the bottom electrode;
a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer;
a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film;
a high thermal expansion coefficient material layer disposed on the cover layer and sidewalls of the opening while leaving a central portion of the opening uncovered so that a central portion of the exposed portion of the sensing film remains exposed, the high thermal expansion coefficient material layer having a high thermal expansion coefficient higher than a thermal expansion coefficient of the sensing film, wherein the exposed central portion is not covered by any other layer.

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Zhang Xianming
• Fu Guangcai

Classifications

• B81B3/0081 Primary

  Thermal properties · CPC title

• G01L9/0048

  Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief · CPC title

• G01L9/005

  Non square semiconductive diaphragm · CPC title

• G01L9/0047

  Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness · CPC title

• G01L19/04

  Means for compensating for effects of changes of temperature {, i.e. other than electric compensation} · CPC title