Substrate including selectively formed barrier layer

Patent metadata

Field	Value
Publication number	US-9748135-B2
Application number	US-201514828608-A
Country	US
Kind code	B2
Filing date	Aug 18, 2015
Priority date	May 28, 2014
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

First claim

What is claimed is:

1. A method of selectively locating a barrier layer on a substrate, the method comprising:
forming a barrier layer on a surface of a dielectric layer included with the substrate, the barrier layer comprising a metal element and a non-metal element, the barrier layer having an electrical resistivity no less than about 50 micro-ohm*cm, and formed from a material selected from the group comprising tantalum nitride (TaN) and titanium nitride (TiN), and the substrate is formed from a dielectric material:
forming an electrically conductive film layer on the barrier layer;
forming a surface component on the electrically conductive film layer; and
selectively ablating portions of at least one of the barrier layer and the conductive film layer from the dielectric layer,
wherein the surface component has a first thickness and the barrier layer has a second thickness less than the first thickness, and wherein the selective ablating includes selectively radiating the dielectric layer based on the first thickness of the surface component and the second thickness of the barrier layer,
wherein the selectively ablating portions of the barrier layer includes directing energy pulses to the barrier layer such that the barrier layer is ablated and re-exposes the dielectric layer in response to the dielectric layer reaching an ablation threshold, and wherein the selectively ablating portions of the barrier layer includes selectively radiating a first portion of the dielectric layer to a first temperature while radiating a second portion of the dielectric layer to a second temperature less than the first temperature; and forming an encapsulation layer on the surface component and the re-exposed portions of the dielectric layer, the encapsulation layer formed from TaN; and directing energy pulses to the encapsulation layer such that a first portion of the encapsulation layer ablates from the re-exposed portions of the dielectric layer while a second portion of the encapsulation layer is maintained and encapsulates the surface component.

2. The method of claim 1 wherein the first portion of the dielectric layer is below the barrier layer and is isolated from the surface component, and the second portion of the dielectric layer is below the surface component.

3. The method of claim 1 , wherein the selectively laser radiating the dielectric layer includes transferring laser radiation via the barrier layer to radiate the first portion of the dielectric layer to the temperature threshold while inhibiting the second portion of the dielectric layer from reaching the temperature threshold using the surface component.

Assignees

• IBM
• Suss Microtec Photonic Systems Inc

Inventors

• Brovman Yuri M
• Erwin Brian M
• Polomoff Nicholas A
• Schuler Jennifer D
• Souter Matthew E
• Tessler Christopher L

Classifications

• H10W72/01971

  Cleaning, e.g. oxide removal · CPC title

• H10W72/01953

  by etching · CPC title

• H10W72/01951

  Changing the shapes of bond pads · CPC title

• H10W72/01215

  forming coatings · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title