Substrate treatment apparatus and substrate treatment method

Patent metadata

Field	Value
Publication number	US-9748091-B2
Application number	US-201514836145-A
Country	US
Kind code	B2
Filing date	Aug 26, 2015
Priority date	Apr 1, 2015
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

First claim

The invention claimed is:

1. A substrate treatment method comprising:
housing a substrate in a housing;
supplying chemicals including a first chemical that contains a silylation agent in a gas state to the substrate in the housing, the chemicals including a chemical having a first boiling point and a chemical having a second boiling point lower than the first boiling point; and
cooling the substrate in the housing while supplying any of the chemicals to the substrate in the housing,
the method further comprising
supplying the chemical having the first boiling point to the substrate after supplying the chemical having the second boiling point to the substrate; and
supplying the chemical having the second boiling point to the substrate again after supplying the chemical having the first boiling point to the substrate.

2. The method of claim 1 , wherein the chemicals further include a second chemical that contains alcohol.

3. The method of claim 1 , wherein the substrate is cooled such that a temperature of the substrate is lower than a boiling point of the chemicals.

4. The method of claim 1 , wherein the substrate is cooled by supplying a gas or a liquid to cool the substrate.

5. The method of claim 1 , wherein the substrate is cooled with a Peltier device disposed near the substrate.

6. The method of claim 1 , wherein the substrate is cooled in the whole period in which the first chemical is supplied to the substrate.

7. The method of claim 1 , wherein the substrate is cooled in one or more parts of a period in which the first chemical is supplied to the substrate.

8. A substrate treatment method comprising:
supplying a chemical having a second boiling point in a gas state to a substrate;
supplying a chemical having a first boiling point higher than the second boiling point in a gas state to the substrate after supplying the chemical having the second boiling point to the substrate, thereby forming a silylation film on the substrate;
supplying the chemical having the second boiling point in a gas state again to the substrate after supplying the chemical having the first boiling point to the substrate; and
cooling the substrate while supplying the chemical having the first boiling point or the chemical having the second boiling point to the substrate.

9. The method of claim 8 , wherein the chemical having the first boiling point contains a silylation agent.

Assignees

• Toshiba Memory Corp

Inventors

• Kimura Shinsuke
• Koide Tatsuhiko
• Ogawa Yoshihiro

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H01L21/67109

  Electricity · mapped topic