Substrate treatment method, computer readable storage medium and substrate treatment system

Patent metadata

Field	Value
Publication number	US-9741583-B2
Application number	US-201515129000-A
Country	US
Kind code	B2
Filing date	Apr 16, 2015
Priority date	Apr 25, 2014
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

First claim

What is claimed:

1. A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate treatment method comprising:
a resist pattern formation step of forming a plurality of circular patterns of a resist film on the substrate;
a first block copolymer coating step of applying a first block copolymer to the substrate after the formation of the circular patterns of the resist film;
a first polymer separation step of phase-separating the first block copolymer into the hydrophilic polymer and the hydrophobic polymer;
a first polymer removal step of selectively removing the hydrophilic polymer from the phase-separated first block copolymer;
a resist removal step of selectively removing the resist film from a top of the substrate;
a second block copolymer coating step of applying a second block copolymer to the substrate after the removal of the resist;
a second polymer separation step of phase-separating the second block copolymer into the hydrophilic polymer and the hydrophobic polymer; and
a second polymer removal step of selectively removing the hydrophilic polymer from the phase-separated second block copolymer,
wherein a ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

2. The substrate treatment method according to claim 1 , further comprising:
after the first polymer removal step, an etching treatment step of performing an etching treatment using the resist film and the hydrophobic polymer as a mask.

3. The substrate treatment method according to claim 2 , further comprising:
after the second polymer removal step, another etching treatment step of performing an etching treatment using the hydrophobic polymer as a mask.

4. The substrate treatment method according to claim 1 ,
wherein the resist film is formed of a resist having a polarity.

5. The substrate treatment method according to claim 4 ,
wherein the selective removal of the hydrophilic polymer in the first polymer removal step is performed by irradiating the substrate with an energy ray and then supplying a polar organic solvent onto the substrate between the first polymer separation step and the first polymer removal step.

6. The substrate treatment method according to claim 1 ,
wherein the hydrophilic polymer is polymethyl methacrylate, and
wherein the hydrophobic polymer is polystyrene.

7. The substrate treatment method according to claim 1 ,
wherein the circular patterns formed of the resist film are arranged in a lattice form, a triangular form or a hexagonal form.

8. A computer-readable storage medium storing a program running on a computer of a control unit controlling a substrate treatment system to cause the substrate treatment system to perform a substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer,
the substrate treatment method comprising:
a resist pattern formation step of forming a plurality of circular patterns of a resist film on the substrate;
a first block copolymer coating step of applying a first block copolymer to the substrate after the formation of the circular patterns of the resist film;
a first polymer separation step of phase-separating the first block copolymer into the hydrophilic polymer and the hydrophobic polymer;
a first polymer removal step of selectively removing the hydrophilic polymer from the phase-separated first block copolymer;
a resist removal step of selectively removing the resist film from a top of the substrate;
a second block copolymer coating step of applying a second block copolymer to the substrate after the removal of the resist;
a second polymer separation step of phase-separating the second block copolymer into the hydrophilic polymer and the hydrophobic polymer; and
a second polymer removal step of selectively removing the hydrophilic polymer from the phase-separated second block copolymer,
wherein a ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

9. A substrate treatment system of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate treatment system comprising:
a developing apparatus that develops a resist film after exposure processing formed on the substrate to form a resist pattern;
a block copolymer coating apparatus that applies a first block copolymer and a second block copolymer to the substrate after the formation of the resist pattern;
a polymer separation apparatus that phase-separates the first block copolymer and the second block copolymer into the hydrophilic polymer and the hydrophobic polymer;
a polymer removing apparatus that selectively removes the hydrophilic polymer from the phase-separated first block copolymer and second block copolymer;
a resist removing apparatus that selectively removes the resist film from a top of the substrate; and
a control unit that controls the block copolymer coating apparatus, the polymer separation apparatus, the polymer removing apparatus, and the resist removing apparatus,
the control unit being configured to control:
the block copolymer coating apparatus to apply the first block copolymer to the substrate after a circular pattern is formed;
the polymer separation apparatus to phase-separate the first block copolymer into the hydrophilic polymer and the hydrophobic polymer;
the polymer removing apparatus to selectively remove the hydrophilic polymer after the phase-separation;
the resist removing apparatus to selectively remove the resist film from the top of the substrate;
the block copolymer coating apparatus to apply the second block copolymer to the substrate after the removal of the resist;
the polymer separation apparatus to phase-separate the second block copolymer into the hydrophilic polymer and the hydrophobic polymer; and
the polymer removing apparatus to selectively remove the hydrophilic polymer from the phase-separated second block copolymer,

wherein a ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

Assignees

• Tokyo Electron Ltd

Inventors

• Muramatsu Makoto
• Kitano Takahiro
• Tomita Tadatoshi
• You Gen
• Nishi Takanori

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title