Symmetric plasma process chamber

Patent metadata

Field	Value
Publication number	US-9741546-B2
Application number	US-201213629267-A
Country	US
Kind code	B2
Filing date	Sep 27, 2012
Priority date	Oct 5, 2011
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

First claim

The invention claimed is:

1. A plasma processing apparatus, comprising:
a lid assembly and a chamber body enclosing a processing region located above a bottom wall of an upper liner and a mesh liner coupled to the bottom wall of the upper liner;
a substrate support assembly disposed in the chamber body;
an exhaust assembly defining an evacuation region within the chamber body, wherein the chamber body includes a plurality of evacuation channels symmetrically disposed about a central axis of the substrate support assembly fluidly connecting the processing region with the evacuation region, wherein the substrate support assembly comprises a lower electrode and a support pedestal disposed in a central region fluidly sealed from the processing and evacuation regions, wherein the central axis is a vertical axis; and
a plurality of access tubes positioned through the chamber body to provide access to the central region, the plurality of access tubes extending horizontally from the chamber body disposed below the support pedestal and arranged spaced apart in a spoke pattern symmetrically about the central axis of the substrate support assembly, wherein each one of the plurality of evacuation channels extends below a corresponding one of a plurality of evacuation passages positioned in the bottom wall of the upper liner, wherein each one of the plurality of evacuation channels extends between two of the plurality of access tubes, and wherein each access tube is vertically spaced apart from the processing region.

2. The apparatus of claim 1 , wherein the chamber body has an exhaust port formed therethrough that is symmetric about the central axis of the substrate support pedestal.

3. The apparatus of claim 1 , wherein the lid assembly comprises an upper electrode having a central manifold configured to distribute processing gas into the processing region and one or more outer manifolds configured to distribute processing gas into the processing region.

4. The apparatus of claim 3 , wherein the lid assembly further comprises a ring manifold coupled to the one or more outer manifolds via a plurality of gas tubes arranged symmetrically about the central axis of the substrate support assembly.

5. The apparatus of claim 1 , further comprising:
a first actuation device disposed within the central region and configured to vertically move the substrate support assembly a distance.

6. The apparatus of claim 5 , wherein the distance is substantially the same as a vertical length of an opening of each of the access tubes.

7. The apparatus of claim 1 , further comprising:
a second actuation device disposed within the central region and configured to vertically move a plurality of substrate support pins disposed within the substrate support assembly.

8. The apparatus of claim 1 ,
wherein the upper liner circumscribes the processing region, wherein the upper liner has a cylindrical wall with a plurality of slots disposed therethrough and arranged symmetrically about the central axis of the substrate support assembly.

9. The apparatus of claim 8 , further comprising a backing liner coupled to the cylindrical wall covering at least one of the plurality of slots.

10. The apparatus of claim 8 , wherein the mesh liner is annularly disposed about the substrate support assembly and is electrically coupled to the upper liner.

11. The apparatus of claim 10 , wherein the mesh liner has a plurality of apertures disposed therethrough and arranged symmetrically about a central axis of the mesh liner.

12. A plasma processing apparatus, comprising:
a lid assembly and a chamber body enclosing a processing region located above a bottom wall of an upper liner and a mesh liner coupled to the bottom wall of the upper liner, wherein the lid assembly comprises:
an upper electrode having a central manifold configured to distribute processing gas into the processing region and one or more outer manifolds configured to distribute processing gas into the processing region; and
a ring manifold coupled to the one or more outer manifolds via a plurality of gas tubes arranged symmetrically about a vertical axis; and

a substrate support assembly disposed in the chamber body about a central axis co-linear with the vertical axis, wherein the substrate support assembly comprises:
a lower electrode and a support pedestal disposed in a central region of the chamber body fluidly sealed from the processing region; and
a plurality of access tubes positioned through the chamber body to provide access to the central region, the plurality of access tubes extending horizontally from the chamber body disposed below the support pedestal and arranged spaced apart in a spoke pattern symmetrically about the central axis of the substrate support assembly;

a plurality of evacuation passages positioned in the bottom wall of the upper liner symmetrically disposed about the central axis of the substrate support assembly; and
a plurality of evacuation channels symmetrically disposed in the chamber body, each extending below a corresponding one of the plurality of evacuation passages between two of the plurality of access tubes, wherein each access tube is vertically spaced apart from the processing region.

13. The apparatus of claim 12 , wherein the substrate support assembly comprises
a first actuation device disposed within the central region and configured to vertically move the substrate support assembly a distance.

14. The apparatus of claim 13 , wherein the distance is substantially the same as a vertical length of an opening of each of the access tubes.

15. The apparatus of claim 13 , further comprising a second actuation device disposed within the central region and configured to vertically move a plurality of substrate support pins disposed within the substrate support assembly.

16. A plasma processing apparatus, comprising:
a lid assembly and a chamber body enclosing a processing region located above a bottom wall of an upper liner and a mesh liner coupled to the bottom wall of the upper liner;
a substrate support assembly disposed in the chamber body, wherein the substrate support assembly comprises:
a lower electrode and a support pedestal disposed in a central region of the chamber body fluidly sealed from the processing region; and
a plurality of access tubes positioned through the chamber body to provide access to the central region, the plurality of access tubes extending horizontally from the chamber body disposed below the support pedestal and arranged spaced apart in a spoke pattern symmetrically about a central axis of the substrate support assembly, wherein the central axis is a vertical axis;

a plurality of evacuation passages positioned in the bottom wall of the upper liner symmetrically disposed about the central axis of the substrate support assembly;
a plurality of evacuation channels symmetrically disposed in the chamber body, each extending below a corresponding one of the plurality of evacuation passages between two of the plurality of access tubes, wherein each access tube is vertically spaced apart from the processing region, wherein the upper liner circumscribes the processing region, wherein the upper liner has a cylindrical wall with a plurality of slots disposed therethrough and arranged symmetrically about the central axis of the substrate support assembly, and wherein the mesh liner is annularly disposed about the substrate support assembly and is electrically coupled to the upper liner; and
a backing liner coupled to the cylindrical wall and covering at least one of the plurality of slots.

1

Assignees

• Applied Materials Inc

Inventors

• Carducci James D
• Tavassoli Hamid
• Balakrishna Ajit
• Chen Zhigang
• Nguyen Andrew
• Buchberger Jr Douglas A
• Ramaswamy Kartik
• Rauf Shahid
• Collins Kenneth S

Classifications

• H01J37/32724

  Temperature · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

• H01J2237/3323

  uniformity · CPC title