RF power delivery regulation for processing substrates

Patent metadata

Field	Value
Publication number	US-9741539-B2
Application number	US-201514886891-A
Country	US
Kind code	B2
Filing date	Oct 19, 2015
Priority date	Oct 5, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

First claim

The invention claimed is:

1. A method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power, comprising:
providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period;
providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period;
obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period; and
performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained first reflected power during the first time period to produce a delivered power at a preset power level.

2. The method of claim 1 , further comprising:
providing the first pulsed RF power waveform at a second power level during a second time period, wherein the second power level is substantially equivalent to the first power level;
providing a second pulsed RF power waveform at a second power level during the second time period;
obtaining a second reflected power created by the first and second pulsed RF power waveforms provided during the second time period; and
performing a second load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained second reflected power during the first time period to produce a delivered power at the preset power level.

3. The method of claim 2 , wherein the first pulsed RF power waveform is an RF source signal.

4. The method of claim 2 , wherein the second pulsed RF power waveform is an RF bias signal.

5. The method of claim 2 , wherein the second power level of the second pulsed RF power is a zero power level.

6. The method of claim 2 , wherein the first and second load leveling processes performed adjust the first and second power levels, respectively, for the first pulsed RF power waveform to provide a substantially constant delivered power.

7. The method of claim 2 , wherein the obtained first and second reflected powers are measured values.

8. The method of claim 2 , wherein the obtained first and second reflected powers are calculated values based on the first and second pulsed RF power waveforms used, respectively.

9. The method of claim 2 , wherein the first reflected power is created by the first and second pulsed RF power waveforms provided during the first time, and wherein the second reflected power is created by the first and second pulsed RF power waveforms provided during the second time period.

10. The method of claim 2 , wherein a frequency of the first pulsed RF power waveform is about 2 MHz to about 162 MHz, and wherein a frequency of the second pulsed RF power waveform is about 2 MHz to about 162 MHz.

11. The method of claim 2 , wherein the first and second power levels of the first pulsed RF power waveform is about 200 watts to about 5.0 KW.

12. The method of claim 2 , wherein the first power level of the second pulsed RF power waveform is about 200 watts to about 5.0 KW, and wherein the second power level is about 0-99% of the first power level of the second pulsed RF power waveform.

13. The method of claim 2 , wherein the first pulsed RF power waveform and the second pulsed RF power waveform are synchronized.

14. The method of claim 2 , wherein the first and second time periods are different from each other.

15. The method of claim 1 , wherein the first pulsed RF power waveform simulates a continuous RF power waveform provided to the process chamber at the first power level.

Assignees

• Applied Materials Inc

Inventors

• Kawasaki Katsumasa
• Phi Justin
• Shoji Sergio

Classifications

• H01J37/32146 Primary

  Amplitude modulation, includes pulsing · CPC title

• H01J2237/334

  Etching · CPC title

• H01J37/32165

  Plural frequencies · CPC title

• H01J37/32082 Primary

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H01J37/32091 Primary

  the radio frequency energy being capacitively coupled to the plasma · CPC title