Coil structure for generating plasma and semiconductor equipment
US-2024339296-A1 · Oct 10, 2024 · US
US8974684B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8974684-B2 |
| Application number | US-201213458191-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2012 |
| Priority date | Oct 28, 2011 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Official abstract text for this publication.
Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle; adjusting a phase variance between the first and second RF signals to control an ion energy distribution in the plasma; and etching the substrate with the plasma.
Opening claim text (preview).
The invention claimed is: 1. A method of etching a substrate, comprising: generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle, and wherein an “on” portion of the second RF signal is entirely embedded with an “on” portion of the first RF signa…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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