Negative ribbon ion beams from pulsed plasmas

Patent metadata

Field	Value
Publication number	US-9734991-B2
Application number	US-201514811272-A
Country	US
Kind code	B2
Filing date	Jul 28, 2015
Priority date	Jul 28, 2015
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

First claim

What is claimed is:

1. An apparatus for creating a negative ribbon ion beam, comprising:
an ion source having a plurality of chamber walls defining an ion source chamber and having an extraction aperture;
an RF antenna disposed proximate one of the plurality of chamber walls of the ion source chamber;
an RF power supply in communication with the RF antenna, and outputting a first RF power level for a first time duration to the RF antenna to create a plasma within the ion source chamber from a feed gas and outputting a second RF power level, lower than the first RF power level, for a second time duration, wherein the plasma cools during the second time duration so that a number of negative ions in the plasma increases; and
a bias power supply to create a negative extraction voltage, the extraction voltage defined as a voltage difference between a plasma disposed in the ion source chamber and a workpiece, such that the bias power supply is pulsed to create the negative extraction voltage during at least a portion of the second time duration, so as to extract the negative ribbon ion beam from the ion source chamber through the extraction aperture.

2. The apparatus of claim 1 , wherein at least one of the plurality of chamber walls is electrically conductive and the bias power supply is in communication with electrically conductive chamber walls of the ion source chamber and the bias power supply provides a negative pulse to the electrically conductive chamber walls to create the negative extraction voltage.

3. The apparatus of claim 1 , wherein the bias power supply is in communication with a platen on which the workpiece is disposed, and the bias power supply provides a positive pulse to the platen to create the negative extraction voltage.

4. The apparatus of claim 1 , comprising extraction optics disposed outside the ion source chamber and proximate the extraction aperture to manipulate the negative ribbon ion beam.

5. The apparatus of claim 1 , further comprising a coating comprising a low work function material, disposed on an interior surface of at least one of the plurality of chamber walls, to contribute electrons to the plasma.

6. The apparatus of claim 1 , wherein the second RF power level is 0 volts.

7. The apparatus of claim 1 , wherein the bias power supply delays a phase delay after an expiration of the first time duration before creating the negative extraction voltage.

8. The apparatus of claim 7 , wherein the phase delay is selected so as to maximize a beam current of the negative ribbon ion beam.

9. The apparatus of claim 1 , wherein the first time duration and the second time duration define a period of the RF power supply, and the RF power supply repeatedly outputs the first RF power level and the second RF power level and wherein the bias power supply continuously pulses to output the negative extraction voltage and has a period equal to the period of the RF power supply.

10. A method of extracting a negative ribbon ion beam, comprising:
applying a first RF power level for a first time duration to a RF antenna proximate an ion source chamber to create a plasma within the ion source chamber from a feed gas and a second RF power level, lower than the first RF power level, for a second time duration, wherein the plasma cools during the second time duration so that a number of negative ions in the plasma increases;
pulsing a bias voltage to attract negative ions from an ion source chamber, as a negative ribbon ion beam, through an extraction aperture during at least a portion of the second time duration; and
repeating the applying, and pulsing a plurality of times.

11. The method of claim 10 , further comprising determining a phase delay between an expiration of the first time duration and the pulsing so as to maximize a current of the negative ribbon ion beam.

12. The method of claim 10 , further comprising varying the first time duration, the second time duration, and a phase delay between an expiration of the first time duration and the pulsing so as to control a composition of the negative ribbon ion beam.

13. The method of claim 10 , wherein the negative ribbon ion beam is not mass analyzed prior to impacting a workpiece.

14. The method of claim 10 , wherein the second RF power level is 0 volts.

15. The method of claim 10 , further comprising using extraction optics disposed proximate the extraction aperture to manipulate the negative ribbon ion beam.

16. A method of extracting a ribbon ion beam, comprising:
applying a RF power level for a first time duration from a RF power supply to a RF antenna proximate an ion source chamber to create a plasma within the ion source chamber from a feed gas and disabling the RF power supply for a second time duration to reduce an electric field in the ion source chamber;
waiting a phase delay after disabling the RF power supply to allow electrons in the ion source chamber to cool and to attach to atoms or molecules in the ion source chamber and create negative ions; and
creating a negative voltage difference between the plasma in the ion source chamber and a workpiece after the phase delay during a portion of the second time duration so as to attract a negative ribbon ion beam toward the workpiece.

17. The method of claim 16 , wherein the phase delay is selected to maximize a beam current of the negative ribbon ion beam.

18. The method of claim 16 , wherein the first time duration is equal to the second time duration.

19. The method of claim 16 , wherein the negative voltage difference only occurs while the RF power supply is disabled.

20. The method of claim 16 , further comprising creating a positive voltage difference between the plasma in the ion source chamber and a workpiece during a portion of the first time duration, so as to extract a positive ion beam during the first time duration.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Distaso Daniel
• Radovanov Svetlana B
• Dzengeleski Joseph P

Classifications

• H01J2237/0815

  Methods of ionisation · CPC title

• H01J2237/31732

  Depositing thin layers on selected microareas · CPC title

• H01J27/16

  using high-frequency excitation, e.g. microwave excitation · CPC title

• H01J2237/3151

  Etching · CPC title

• H01J2237/31701

  Ion implantation · CPC title