Optoelectronic device comprising microwires or nanowires

Patent metadata

Field	Value
Publication number	US-9728680-B2
Application number	US-201314758162-A
Country	US
Kind code	B2
Filing date	Dec 27, 2013
Priority date	Dec 28, 2012
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

An optoelectronic device comprises microwires or nanowires, each of which comprises an alternation of passivated portions and of active portions, the active portions being surrounded with an active layer, where the active layers do not extend on the passivated portions.

First claim

What is claimed is:

1. An optoelectronic device comprising microwires or nanowires mainly comprising a III-V compound, each said microwire or nanowire comprising an alternation of passivated portions and of active portions, wherein the heights of the active portions are different, each active portion being surrounded, at the periphery thereof, with an active layer, where the active layers do not extend on the passivated portions, the active layers being the layers from which most of the radiation provided by the device is emitted or in which most of the radiation received by the device is captured.

2. The device of claim 1 , wherein at least one of the active portions has a height greater than or equal to 4 μm.

3. The device of claim 1 , wherein at least one of the active portions has a height less than 5 μm.

4. The device of claim 1 , wherein the height of each passivated portion interposed between two active portions is in the range from 200 nm to 10 μm.

5. The device of claim 1 , wherein each passivated portion is surrounded with a layer of dielectric material having a thickness in the range from one atomic monolayer to 10 nm.

6. The device of claim 1 , wherein the passivated and active portions have the same average diameter.

7. The device of claim 1 , wherein the passivated and active portions have different diameters.

8. The device of claim 1 , wherein the passivated portions comprise a doped III-V compound, the active portions mainly comprising a III-V compound which is undoped or less heavily doped than the passivated portions.

9. The device of claim 8 , wherein the III-V compound is a III-N compound, selected from the group consisting of: gallium nitride, aluminum nitride, indium nitride, gallium indium nitride, gallium aluminum nitride, aluminum indium nitride, and gallium aluminum indium nitride.

10. The device of claim 8 , wherein the III-V compound is gallium nitride and the dopant of the doped III-V compound is silicon.

11. The device of claim 1 , wherein each microwire or nanowire rests on a support and wherein, for each microwire or nanowire, the portion most distant from the support is a passivated portion.

12. The device of claim 1 , wherein each active layer comprises a multiple quantum well or single layer structure.

13. A method of manufacturing the optoelectronic device of claim 1 , wherein the passivated portions are formed in a reactor with first proportions of precursors of III-V compounds and a dopant, and wherein the active portions are formed in the same reactor in different growth conditions and with a dopant rate less than that of the passivated portions or equal to zero.

14. An optoelectronic device comprising microwires or nanowires mainly comprising a III-V compound, each said microwire or nanowire comprising an alternation of passivated portions and of active portions, each active portion being surrounded, at the periphery thereof, with an active layer, wherein the passivated and active portions have the same average diameter, where the active layers do not extend on the passivated portions, the active layers being the layers from which most of the radiation provided by the device is emitted or in which most of the radiation received by the device is captured.

15. The device of claim 14 , wherein one of the passivated portions is disposed at the top of each microwire or nanowire.

16. The device of claim 14 , wherein the passivated portions comprise a doped III-V compound, the active portions mainly comprising a III-V compound which is undoped or less heavily doped than the passivated portions.

17. The device of claim 16 , wherein each microwire or nanowire is a GaN wire covered with active layers based on InGaN and having an average diameter of approximately 2 μm, wherein the heights of the active portions are less than 4 to 5 μm.

18. The device of claim 14 , wherein the heights of the active portions are equal.

19. An optoelectronic device comprising microwires or nanowires mainly comprising a III-V compound, each said microwire or nanowire comprising an alternation of passivated portions and of active portions, each active portion being surrounded, at the periphery thereof, with an active layer, wherein the passivated portions comprise a doped III-V compound, the active portions mainly comprising a III-V compound which is undoped or less heavily doped than the passivated portions, where the active layers do not extend on the passivated portions, the active layers being the layers from which most of the radiation provided by the device is emitted or in which most of the radiation received by the device is captured.

20. The device of claim 14 , wherein one of the passivated portions is disposed at the top of each microwire or nanowire.

Assignees

• Commissariat à l'Energie Atomique et aux Energies Alternatives
• Aledia
• Commissariat A L'Energie Atomique Et Aux Energies

Inventors

• Dussaigne Amélie
• Million Alain
• Bavencove Anne-Laure

Classifications

• H01L31/075

  Electricity · mapped topic

• H01L31/035281

  Electricity · mapped topic

• H01L31/03044

  Electricity · mapped topic

• H01L31/03529

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic