Light emitting diode of which an active area comprises layers of inn

Patent metadata

Field	Value
Publication number	US-2016204307-A1
Application number	US-201414913254-A
Country	US
Kind code	A1
Filing date	Aug 21, 2014
Priority date	Aug 22, 2013
Publication date	Jul 14, 2016
Grant date	—

Abstract

A light emitting diode including an n-doped In Xn Ga (1-Xn) N layer and a p-doped In Xp Ga (1-Xp) N layer, and an active area arranged between the In Xn Ga (1-Xn) N layer and the In Xp Ga (1-Xp) N layer including: a first InN layer with a thickness e InN106 ; a second InN layer with a thickness e InN108 ; a separating layer arranged between the InN layers and including In Xb Ga (1-Xb) N and a thickness <3 nm; an In X1 Ga (1-X1) N layer arranged between the In Xn Ga (1-Xn) N layer and the first InN layer; an In X2 Ga (1-X2) N layer arranged between the In Xp Ga (1-Xp) N layer and the second InN layer; wherein the indium compositions Xn, Xp, Xb, X1 and X2 are between 0 and about 0.25, and wherein the thicknesses e InN106 and e InN108 are such that e InN106 <e InN108 .

First claim

1 - 10 . (canceled)

11 . A light emitting diode comprising:
at least one n-doped In Xn Ga (1-Xn) N layer and a p-doped In Xp Ga (1-Xp) N layer forming together a p-n junction of the light emitting diode; and an active area arranged between the n-doped In Xn Ga (1-Xn) N layer and the p-doped In Xp Ga (1-Xp) N layer and wherein radiative recombinations are able to occur, the active area comprising: a first InN layer with a thickness e InN106 ; a second InN layer with a thickness e InN108 ; a separating layer arranged between the first InN layer and the second InN layer and such that the first InN layer is arranged between the separating layer and the n-doped In Xn Ga (1-Xn) N layer, the separating layer comprising In Xb Ga (1-Xb) N and a thickness lower than or equal to about 3 nm; an In X1 Ga (1-X1) N layer arranged between the n-doped In Xn Ga (1-Xn) N layer and the first InN layer; In X2 Ga (1-X2) N layer arranged between the p-doped In Xp Ga (1-Xp) N layer and the second InN layer; wherein the indium compositions Xn, Xp, Xb, X1 and X2 are between 0 and about 0.25, and wherein the thicknesses e InN106 and e InN108 are such that e InN106 <e InN108 .

12 . The light emitting diode according to claim 11 , wherein the thicknesses e InN106 and e InN108 are between 1 single layer and 3 single layers.

13 . The light emitting diode according to claim 12 , wherein, when one or each of the first InN layer and the second InN layer has a thickness between 2 single layers and 3 single layers, the indium composition Xb is higher than or equal to about 0.15, or when the indium composition Xb is lower than about 0.15, the thickness of the one or each of the first InN layer and the second InN layer is lower than or equal to 2 single layers.

14 . The light emitting diode according to claim 11 , wherein the indium compositions X1 and X2 are such that X1≦X2, or wherein the indium compositions Xn, Xp, Xb, X1 and X2 are such that Xn<X1<X2<Xp, or such that Xn=Xp=0 and/or X1=Xb=X2.

15 . The light emitting diode according to claim 11 , wherein the thickness of the n-doped In Xn Ga (1-Xn) N layer and/or the thickness of the p-doped In Xp Ga (1-Xp) N layer is between about 20 nm and 10 μm, and/or the thickness of the In X1 Ga (1-X1) N layer and/or the thickness of the In X2 Ga (1-X2) N layer is between about 1 nm and 200 nm.

16 . The light emitting diode according to claim 11 , further comprising a first metal electrode arranged against the n-doped In Xn Ga (1-Xn) N layer and a second metal electrode arranged against the p-doped In Xp Ga (1-Xp) N layer.

17 . The light emitting diode according to claim 11 , wherein the active area includes a number of InN layers higher than 2, each of the InN layers being separated from the or each of the adjacent InN layers by a separating layer comprising InGaN or GaN and with a thickness lower than or equal to about 3 nm.

18 . The light emitting diode according to claim 11 , comprising plural active areas arranged between the n-doped In Xn Ga (1-Xn) N layer and the p-doped In Xp Ga (1-Xp) N layer and wherein radiative recombinations are able to occur.

19 . The light emitting diode according to claim 11 , further comprising, between the n-doped In Xn Ga (1-Xn) N layer and the active area, an n-doped InGaN buffer layer, the n-doped InGaN of the buffer layer including a band gap energy lower than or equal to about 97% of the band gap energy of the p-doped In Xp Ga (1-Xp) N.

20 . A method for making a light emitting diode according to claim 11 , wherein the layers of the light emitting diode are planar layers made by growing over each other, or wherein the layers of the light emitting diode are made by growing as radial or axial nanowires.

Assignees

• Commissariat à l'énergie atomique et aux énergies alternatives
• Aledia
• Commissariat Energie Atomique

Inventors

• Robin Ivan-Christophe
• Dussaigne Amelie

Classifications

• H10H20/818

  within the light-emitting regions · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title