One-dimensional titanium nanostructure and method for fabricating the same

US9725825B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9725825-B2
Application numberUS-201715412805-A
CountryUS
Kind codeB2
Filing dateJan 23, 2017
Priority dateJan 4, 2013
Publication dateAug 8, 2017
Grant dateAug 8, 2017

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  1. Title

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  5. First independent claim

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Abstract

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A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for fabricating a one-dimensional titanium nanostructure, comprising steps: placing a heat-resistant substrate and a titanium metal in a CVD (Chemical Vapor Deposition) reaction chamber; and using a carrier gas to transport titanium tetrachloride into said CVD reaction chamber, undertaking a reaction of said titanium metal and said titanium tetrachloride to generate titanium subchloride, and letting said titanium subchloride thermolyze to form a one-dimensional titanium nanostructure on said heat-resistant substrate, under a reaction condition of a reaction temperature of 500-900° C., a deposition temperature of 500-850° C., a flow rate of a carrier gas of 0.1-10 sccm and a reaction time of 8-30 hours, wherein said heat-resistant substrate is made of graphite, and said carrier gas is nitrogen, and wherein said one-dimensional titanium nanostructure is a titanium nanowire having a diameter of 20-50 nm and a length of 2-50 μm, and wherein said titanium nanowire is a monocrystalline titanium nanowire or a polycrystalline titanium nanowire. 2. The method for fabricating a one-dimensional titanium nanostructure according to claim 1 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 800-850° C. 3. The method for fabricating a one-dimensional titanium nanostructure according to claim 1 , wherein said monocrystalline titanium nanowire has an FCC lattice structure.

Assignees

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Classifications

  • Nanofibres or nanotubes · CPC title

  • characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

  • Nanotubes · CPC title

  • from metal halides · CPC title

  • characterised by shape · CPC title

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What does patent US9725825B2 cover?
A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 …
Who is the assignee on this patent?
Univ Nat Chiao Tung
What technology area does this patent fall under?
Primary CPC classification C30B29/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 08 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).