High purity manganese and method for producing same

US9725814B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9725814-B2
Application numberUS-201214365287-A
CountryUS
Kind codeB2
Filing dateJul 18, 2012
Priority dateJan 10, 2012
Publication dateAug 8, 2017
Grant dateAug 8, 2017

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  2. Abstract

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Abstract

Official abstract text for this publication.

High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a high purity manganese, comprising a refining process performed by the steps of: acid-washing a manganese primary raw material having a purity of 2N or higher to remove contaminants and a layer of oxides from a surface thereof to obtain a secondary raw material; leaching manganese with an acid from the secondary raw material to produce an acid leachate such that an amount of 1% or more of the secondary raw material remains undissolved within the acid leachate after said leaching step; performing electrolysis using the acid leachate as an electrolytic solution on a cathode side of the electrolysis to obtain a manganese deposit; and melting the manganese deposit in an inert atmosphere of a reduced pressure of 0.01 to 750 torr to eliminate impurities as slag and to obtain a cast ingot of high purity manganese having a purity of 3N (99.9%) or higher and containing a dispersion of foreign substances of non-metal inclusions with a size of 0.5 μm or larger in a number of 50000 or less per 1 g of the high purity manganese. 2. The method according to claim 1 , wherein, during said melting step, a deoxidizing agent having a stronger active potency than Mn is added to the manganese deposit and wherein the slag is concentrated on an upper part of the ingot. 3. The method according to claim 2 , wherein the deoxidizing agent is La, Ca or Mg. 4. The method according to claim 1 , further comprising the step of washing the manganese deposit with diluted nitric acid. 5. The method for producing high purity manganese according to claim 1 , wherein the amount of the secondary raw material remaining undissolved in the acid leachate is 1 to 50%. 6. The method according to claim 5 , wherein, during said melting step, a deoxidizing agent having a stronger active potency than Mn is added to the manganese deposit and wherein the slag is concentrated on an upper part of the ingot. 7. The method according to claim 6 , wherein the deoxidizing agent is La, Ca or Mg. 8. The method according to claim 6 , further comprising the step of washing the manganese deposit with diluted nitric acid.

Assignees

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Classifications

  • Alloys based on manganese · CPC title

  • C25C1/10Primary

    of chromium or manganese · CPC title

  • Obtaining manganese · CPC title

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What does patent US9725814B2 cover?
High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produ…
Who is the assignee on this patent?
Yagi Kazuto, Shindo Yuichiro, Hino Eiji, and 1 more
What technology area does this patent fall under?
Primary CPC classification C25C1/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 08 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).