Method of manufacturing a solar cell with local back contacts

Patent metadata

Field	Value
Publication number	US-9722106-B2
Application number	US-201214349111-A
Country	US
Kind code	B2
Filing date	Oct 5, 2012
Priority date	Oct 7, 2011
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

The invention relates to the manufacturing process of a solar cell ( 1 ) with back contact and passivated emitter, comprising a dielectric stack ( 10 ) of at least two layers consisting of at least a first dielectric layer ( 11 ) made of AlOx in contact with a p-type silicon layer ( 3 ), and a second dielectric layer ( 13 ) deposited on the first dielectric layer ( 11 ). Besides, the method of manufacturing comprising a formation step of at least one partial opening ( 15 ) preferably by laser ablation into the dielectric stack ( 10 ), sparing at least partially the aforementioned first dielectric layer.

First claim

The invention claimed is:

1. A method of manufacturing a solar cell having a front face and a back, opposing face, the solar cell including a silicon substrate having a first surface proximate to the front face and a second, opposing surface distal from the front face, and the method comprising:
providing a dielectric stack having first and second opposing surfaces, wherein the first surface of the dielectric stack is deposited in direct contact with the second surface of the silicon substrate, and the dielectric stack comprises at least a first dielectric layer comprising Aluminum Oxide (AlOx) and a second dielectric layer, each of the first dielectric layer and the second dielectric layer comprising an associated top surface and a bottom, opposing surface, wherein the top surface of the first dielectric layer is the first surface of the dielectric stack and the top surface of the second dielectric layer is deposited in direct contact with the bottom surface of the first dielectric layer;
removing portions of the second dielectric layer to form at least one partial opening in the dielectric stack in a manner such that at least a continuous portion of the first dielectric layer remains at locations of the dielectric stack in which the at least one partial openings are formed such that the first dielectric layer covers the entire second surface of said substrate;
wherein the at least one partial opening in the dielectric stack is formed through a partial laser ablation process in which portions of the second dielectric layer are substantially completely ablated while the first dielectric layer is only partially ablated;
wherein the thickness of the first dielectric layer after partial ablation at the at least one partial opening is between 1 nanometer (nm) and 30 nm; and
providing one or more metal contacts on the back face of the solar cell on the partially ablated first dielectric layer.

2. The method of claim 1 wherein forming the at least one partial opening through the partial laser ablation process comprises applying a pulse laser with a pulse duration of less than about three nanoseconds (ns) to at least a portion of the second dielectric layer.

3. The method of claim 1 wherein providing the dielectric stack comprises providing the first dielectric layer, wherein the first dielectric layer further is provided having a negative charge characteristic, which allows for field effect passivation of the first dielectric layer.

4. The method of claim 1 wherein the second dielectric layer comprises Silicon Nitride (SiN x ).

5. A method of manufacturing a solar cell having a front face and a back face, the solar cell comprising a p-type silicon substrate having a first surface proximate the solar cell front face and a second opposing surface, the method comprising:
providing a dielectric stack having first and second opposing surfaces and disposing the first surface of the dielectric stack over the second surface of the p-type silicon substrate, wherein the dielectric stack comprises at least a first dielectric layer comprising aluminum oxide (AlOx) and a second dielectric layer, each of the first dielectric layer and the second dielectric layers having an associated top surface and a bottom surface, wherein the top surface of the first dielectric layer is the first surface of the dielectric stack and is in direct contact with the second surface of the p-type silicon substrate and
the second dielectric layer is deposited in direct contact with the bottom surface of the first dielectric layer;
forming at least one partial opening in the dielectric stack, wherein the at least one partial openings are formed in the second dielectric layer through laser ablation of portions of the second dielectric layer wherein the laser ablation comprises radiating a laser on the at least a portion of the second dielectric layer, wherein the laser radiates in an ultra-violet (UV) region, wherein the UV region comprises a wavelength in the range of about 355 nanometers (nm) and wherein at least a portion of the first dielectric layer remains continuously across the entirety of each of the at least one partial openings;
wherein the at least one partial opening in the dielectric stack is formed through a partial laser ablation process in which portions of the second dielectric layer are substantially completely ablated while the first dielectric layer is only partially ablated;
wherein the thickness of the first dielectric layer after partial ablation at the at least one partial opening is between 1 nanometer (nm) and 30 nm; and
providing one or more metal contacts on the back face of the solar cell on the partially ablated first dielectric layer.

6. The method of claim 1 , further comprising: forming the at least one partial opening through the partial laser ablation process comprises applying a pulse laser with a pulse duration of less than about three nanoseconds (ns) to at least a portion of the second dielectric layer.

7. The method of claim 6 wherein applying the metallization layer comprises applying an Aluminum (Al) based metallization layer to the back face of the solar cell.

8. The method of claim 6 further comprising:
applying a backsurface field (BSF) formation on areas of the solar cell not including the at least one partial opening, wherein the BSF formation is formed at a temperature greater than 740 degrees Celsius .

9. The method of claim 6 wherein providing one or more metal contacts on the back face of the solar cell comprises forming the metal contacts by annealing the back face of the solar cell at a predetermined temperature, wherein the predetermined temperature may be at least 400 degrees Celsius.

10. A method of manufacturing a solar cell having a front face and a back, opposing face, the solar cell including a silicon substrate having a first surface proximate to the front face and a second, opposing surface distal from the front face, and the method comprising:
providing a dielectric stack having first and second opposing surfaces, wherein the first surface of the dielectric stack is deposited on the second surface of the silicon substrate, and the dielectric stack comprises at least a first dielectric layer comprising Aluminum Oxide (AlOx) and a second dielectric layer, each of the first dielectric layer and the second dielectric layer comprising an associated top surface and a bottom, opposing surface, wherein the top surface of the first dielectric layer is the first surface of the dielectric stack and the top surface of the second dielectric layer is deposited directly on the bottom surface of the first dielectric layer;
removing portions of the second dielectric layer to form at least one partial opening in the dielectric stack in a manner such that the first dielectric layer remains at locations of the dielectric stack in which the at least one partial openings are formed such that the first dielectric layer covers the entire second surface of said substrate;
wherein the at least one partial opening in the dielectric stack is formed through a partial laser ablation process in which portions of the second dielectric layer are substantially completely ablated while the first dielectric layer is only partially ablated;
wherein the thickness of the first dielectric layer after partial ablation at the at least one partial opening is between 1 nanometer (nm) and 30 nm; and
providing one or more metal contacts on the back face of the solar cell on the partially ablated first dielectric layer.

11. The method of manufacturing of a solar cell of claim 10 wherein removing portions of the second dielectric layer comprises removing portions of the second dielectric layer to form a plurality

Assignees

• Total Marketing Services
• Univ Leuven Kath
• Imec

Inventors

• Jaffrennou Perine
• Das Johan
• Uruena De Castro Angel

Classifications

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• B23K26/362

  Laser etching · CPC title

• B23K26/40

  taking account of the properties of the material involved · CPC title

• B23K2103/172

  wherein at least one of the layers is non-metallic · CPC title

• B23K26/361

  for deburring or mechanical trimming (B23K26/351 takes precedence) · CPC title