Wafer processing method

Patent metadata

Field	Value
Publication number	US-9716039-B2
Application number	US-201615151143-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	May 19, 2015
Publication date	Jul 25, 2017
Grant date	Jul 25, 2017

Abstract

A wafer having a substrate and a functional layer formed on the front side of the substrate is processed by attaching a protective tape curable by an external stimulation to the front side of the functional layer. The substrate is cut from the back side along each division line by using a cutting blade, thereby forming a cut groove having a depth not reaching the functional layer, with a part of the substrate left between the bottom of the cut groove and the functional layer. A laser beam is applied along the cut groove, thereby dividing the remaining part of the substrate to divide the wafer into device chips. When the groove is formed, an uncut portion in which the cut groove is not formed is left in a peripheral marginal area of the wafer.

First claim

What is claimed is:

1. A wafer processing method for processing a wafer including a substrate and a functional layer formed on a front side of said substrate, said functional layer being formed with a plurality of crossing division lines and a plurality of devices individually formed in a plurality of separate regions defined by said crossing division lines, said wafer having a device area where said devices are formed and a peripheral marginal area surrounding said device area, said wafer processing method comprising:
a protective tape attaching step of attaching a protective tape curable by an external stimulation to a front side of said functional layer;
a cut groove forming step of cutting said substrate from a back side thereof along each division line by using a cutting blade after performing said protective tape attaching step, thereby forming a cut groove having a depth not reaching said functional layer with a part of said substrate left between a bottom of said cut groove and said functional layer; and
a dividing step of applying a laser beam having an absorption wavelength to said substrate along said cut groove after performing said cut groove forming step, thereby dividing said part of said substrate left between the bottom of said cut groove and said functional layer to divide said wafer into a plurality of device chips;
wherein in said cut groove forming step, an uncut portion in which said cut groove is not formed is left in said peripheral marginal area of said wafer.

2. The wafer processing method according to claim 1 , wherein said laser beam is applied to an area of said wafer corresponding to each division line and including said uncut portion in said dividing step, thereby forming a laser processed groove on an upper surface of said uncut portion, said dividing step including:
a deviation detecting step of imaging said laser processed groove formed on the upper surface of said uncut portion by using imaging means to detect a deviation between a desired laser beam applying position and a position of said laser processed groove as processing position correction information; and
a position correcting step of correcting the applying position of said laser beam according to said processing position correction information after performing said deviation detecting step.

Assignees

• Disco Corp

Inventors

• Ogawa Yuki
• Nagaoka Kensuke
• Obata Tsubasa
• Ban Yuri

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title