Ruthenium metal feature fill for interconnects

Patent metadata

Field	Value
Publication number	US-9711449-B2
Application number	US-201615172648-A
Country	US
Kind code	B2
Filing date	Jun 3, 2016
Priority date	Jun 5, 2015
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.

First claim

What is claimed is:

1. A method for at least partially filling a feature in a substrate, the method comprising:
providing a substrate containing a feature;
depositing a ruthenium (Ru) metal layer to at least partially fill the feature;
heat-treating the substrate to reflow the Ru metal layer in the feature;
depositing additional Ru metal layer on the heat-treated Ru metal layer in the feature; and
heat-treating the additional Ru metal layer to reflow the additional Ru metal layer in the feature.

2. The method of claim 1 , further comprising:
prior to depositing the Ru metal layer, forming a nucleation layer in the feature.

3. The method of claim 2 , wherein the nucleation layer is incomplete with gaps that expose the substrate in the feature.

4. The method of claim 2 , wherein the nucleation layer is selected from the group consisting of Mo, MoN, Ta, TaN, W, WN, Ti, and TiN.

5. The method of claim 1 , further comprising
prior to depositing the Ru metal layer, exposing the substrate to a treatment gas that increases a nucleation rate of the Ru metal layer in the feature.

6. The method of claim 5 , wherein the treatment gas includes nitrogen.

7. The method of claim 1 , wherein the Ru metal layer is deposited by atomic layer deposition (ALD), chemical vapor deposition (CVD), plating, or sputtering.

8. The method of claim 7 , wherein the Ru metal layer is deposited by CVD using Ru 3 (CO) 12 and CO carrier gas.

9. The method of claim 1 , wherein the substrate includes a dielectric layer and the feature is formed in the dielectric layer.

10. The method of claim 1 , wherein the heat-treating is performed in the presence Ar gas, H 2 gas, Ar gas and H 2 gas, or H 2 gas and N 2 gas.

11. The method of claim 1 , wherein the Ru metal layer is deposited at a first substrate temperature and the heat-treating is performed at a second substrate temperature that is greater than the first substrate temperature.

12. The method of claim 11 , wherein the second substrate temperature is between 200° C. and 600° C.

13. A method for at least partially filling a feature in a substrate, the method comprising:
providing a substrate containing a feature;
depositing a ruthenium (Ru) metal layer to at least partially fill the feature, wherein depositing the Ru metal layer pinches off a feature opening before the feature is filled with the Ru metal layer, thereby forming a void inside the feature;
removing excess Ru metal that caused the pinch off; and
heat-treating the substrate to reflow the Ru metal layer in the feature.

14. The method of claim 13 , further comprising:
prior to depositing the Ru metal layer, forming a nucleation layer in the feature.

15. The method of claim 14 , wherein the nucleation layer is selected from the group consisting of Mo, MoN, Ta, TaN, W, WN, Ti, and TiN.

16. The method of claim 14 , wherein the Ru metal layer is deposited by atomic layer deposition (ALD), chemical vapor deposition (CVD), plating, or sputtering.

17. The method of claim 16 , wherein the Ru metal layer is deposited by CVD using Ru 3 (CO) 12 and CO carrier gas.

18. The method of claim 14 , wherein the heat-treating is performed in the presence Ar gas, H 2 gas, Ar gas and H 2 gas, or H 2 gas and N 2 gas.

19. The method of claim 13 , wherein the Ru metal layer is deposited at a first substrate temperature and the heat-treating is performed at a second substrate temperature that is greater than the first substrate temperature.

20. The method of claim 19 , wherein the second substrate temperature is between 200° C. and 600° C.

Assignees

• Tokyo Electron Ltd

Inventors

• Yu Kai-Hung
• Leusink Gerrit J
• Wajda Cory
• Ishizaka Tadahiro
• HAKAMATA Takahiro

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/4432

  the principal metal being a noble metal, e.g. gold · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title