Electrostatic chuck
US-9287806-B2 · Mar 15, 2016 · US
US9711386B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9711386-B2 |
| Application number | US-201414336717-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 21, 2014 |
| Priority date | Jul 22, 2013 |
| Publication date | Jul 18, 2017 |
| Grant date | Jul 18, 2017 |
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Embodiments of the present invention provide a substrate support assembly including an electrostatic chuck with enhanced heat resistance. In one embodiment, an electrostatic chuck includes a support base, an electrode assembly having interleaved electrode fingers formed therein, and an encapsulating member disposed on the electrode assembly, wherein the encapsulating member is fabricated from one of a ceramic material or glass.
Opening claim text (preview).
What is claimed is: 1. An electrostatic chuck comprising: a support base; an electrode assembly having interleaved electrode fingers formed above and in direct contact with the support base, wherein each electrode finger includes interconnections formed between electrode islands, wherein the interconnections and the electrode islands in combination form the electrode fingers in a longitudinal form, each electrode finger is spaced apart, defining a space therebetween; and an encapsulating member disposed on and in direct contact with the electrode assembly, wherein the encapsulating member is fabricated from one of a ceramic material or glass. 2. The electrostatic chuck of claim 1 , wherein the ceramic material used to fabricate the encapsulating member is selected from a group consisting of glass, sapphire, silicon carbide, aluminum nitride, aluminum oxide, yttrium containing materials, yttrium oxide (Y 2 O 3 ), yttrium-aluminum-garnet (YAG), titanium oxide (TiO), or titanium nitride (TiN). 3. The electrostatic chuck of claim 1 , wherein the encapsulating member has a coefficient of thermal expansion between about 2 μm/(m*K) and about 8 μm/(m*K). 4. The electrostatic chuck of claim 1 , wherein the encapsulating member has a thickness between about 0.05 mm and about 2 mm. 5. The electrostatic chuck of claim 1 , wherein the electrode assembly includes a first electrode and a second electrode. 6. The electrostatic chuck of claim 5 , wherein the electrode fingers extend from each of the first and the second electrodes. 7. The electrostatic chuck of claim 5 , wherein the electrode fingers are segmented. 8. The electrostatic chuck of claim 1 , wherein the support base is rigid. 9. The electrostatic chuck of claim 1 , wherein the support base is fabricated from a ceramic or a glass material. 10. The electrostatic chuck of claim 1 , wherein electrostatic chuck working temperature greater than about 600 degrees Celsius. 11. A method for fabricating an electrostatic chuck, comprising: disposing an electrode assembly on and in direct contact with a support base, wherein the electrode assembly includes a plurality of intervening electrode fingers, wherein each electrode finger includes interconnections formed between electrode islands, wherein the interconnections and the electrode islands in combination form the electrode fingers in a longitudinal form, each electrode finger is spaced apart, defining a space therebetween; and forming an encapsulating member on and in direct contact with the electrode assembly, wherein the encapsulating member is fabricated from a glass or ceramic material. 12. The method of claim 11 , wherein the encapsulating member is formed by a chemical vapor deposition (CVD) process, PECVD process, a spin coating process, a flame coating process, aerosol deposition process, physical vapor deposition (PVD) process, immersion coating, sputtering, thermal spraying coating, non-plasma, non-thermal assisted coating, hot isostatic pressing, cold isostatic pressing, lamination, compression molding, casting, compacting, sintering or co-sintering techniques. 13. The method of claim 11 further comprising: bonding the support base, the electrode assembly and the encapsulating member to form an integral part. 14. The method of claim 13 , wherein bonding process heats the support base, the electrode assembly and the encapsulating member to a temperature between about 1200 degrees Celsius and about 2500 degrees Celsius. 15. The method of claim 11 , wherein the electrode assembly is disposed on the support base by a ink jet printing process, rubber stamping process, screen printing process or aerosol print process. 16. The method of claim 11 , wherein the electrode assembly comprises at least two independently bias able electrodes. 17. The method of claim 11 , wherein the ceramic material used to fabricate the encapsulating member is selected from a group consisting of glass, sapphire, silicon carbide, aluminum nitride, aluminum oxide, yttrium containing materials, yttrium oxide (Y 2 O 3 ), yttrium-aluminum-garnet (YAG), titanium oxide (TiO), and titanium nitride (TiN). 18. The method of claim 11 , wherein the encapsulating member has a coefficient of thermal expansion between about 2 μm/(m*K) and about 8 μm/(m*K). 19. An electrostatic chuck, comprising: a support base fabricated from glass or a ceramic material; an electrode assembly disposed on and in direct contact with the support base, wherein the electrode assembly has at least two independently bias able electrodes having a plurality of interleaving electrode fingers formed therein, wherein each electrode finger includes interconnections formed between electrode islands, wherein the interconnections and the electrode islands in combination form the electrode fingers in a longitudinal form, each electrode finger is spaced apart, defining a space therebetween; and an encapsulating member disposed on and in direct contact with the electrode assembly, the encapsulating member fabricated from a glass or ceramic material having a coefficient of thermal expansion substantially matching the coefficient of thermal expansion of a material forming the electrode assembly. 20. The electrostatic chuck of claim 19 , wherein the ceramic material used to fabricate the encapsulating member is selected from a group consisting of glass, sapphire, silicon carbide, aluminum nitride, aluminum oxide, yttrium containing materials, yttrium oxide (Y 2 O 3 ), yttrium-aluminum-garnet (YAG), titanium oxide (TiO), and titanium nitride (TiN).
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