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US-2024322063-A1 · Sep 26, 2024 · US
Method of triggering avalanche breakdown in a semiconductor device
US9705026B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9705026-B2 |
| Application number | US-201615009271-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2016 |
| Priority date | Sep 6, 2013 |
| Publication date | Jul 11, 2017 |
| Grant date | Jul 11, 2017 |
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- Title
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Abstract
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A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.
First claim
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What is claimed is: 1. A method of triggering avalanche breakdown in a semiconductor device, the method comprising: providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below and spaced apart from a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer, wherein the electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown at the pn junction in the semiconductor device by absorption of the radiation in the semiconductor device. 2. The method of claim 1 , further comprising electrically coupling the auxiliary semiconductor device and the semiconductor device in parallel. 3. The method of claim 1 , further comprising limiting a current through the auxiliary semiconductor device by electrically connecting at least one of a resistor, a junction field effect transistor, and a depletion mode field effect transistor in series to the auxiliary semiconductor device. 4. The method of claim 1 , further comprising forming the auxiliary semiconductor device and the semiconductor device in a silicon semiconductor body at a distance of less than 50 μm. 5. The method of claim 1 , further comprising adjusting a first breakdown voltage Vbr 1 of a current path through the semiconductor device larger than a second breakdown voltage Vbr 2 of a current path through the auxiliary semiconductor device. 6. The method of claim 1 , further comprising adjusting a first breakdown voltage Vbr 1 of a current path through the semiconductor device equal to or smaller than a second breakdown voltage Vbr 2 of a current path through the auxiliary semiconductor device.
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Classifications
Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title
Combinations of field-effect devices and resistors only · CPC title
Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title
responsive to excess voltage · CPC title
Electricity · mapped topic
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- What does patent US9705026B2 cover?
- A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a se…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H01L31/173. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).