Active area designs for charge-balanced diodes

Patent metadata

Field	Value
Publication number	US-9704949-B1
Application number	US-201615199262-A
Country	US
Kind code	B1
Filing date	Jun 30, 2016
Priority date	Jun 30, 2016
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A charge-balanced (CB) diode may include one or more CB layers. Each CB layer may include an epitaxial layer having a first conductivity type and a plurality of buried regions having a second conductivity type. Additionally, the CB diode may include an upper epitaxial layer having the first conductivity type that is disposed adjacent to an uppermost CB layer of the one or more CB layers. The upper epitaxial layer may also include a plurality of junction barrier (JBS) implanted regions having the second conductivity type. Further, the CB diode may include a Schottky contact disposed adjacent to the upper epitaxial layer and the plurality of JBS implanted regions.

First claim

The invention claimed is:

1. A charge-balanced (CB) diode, comprising:
an active area comprising:
one or more charge-balanced (CB) layers, wherein each CB layer comprises:
an epitaxial layer having a first conductivity type; and
a plurality of buried regions having a second conductivity type implanted in the epitaxial layer, wherein the plurality of buried regions and the epitaxial layer are both configured to substantially deplete to provide substantially equal amounts of charge from ionized dopants when a reverse bias is applied to the CB diode; and

an upper epitaxial layer having the first conductivity type, wherein the upper epitaxial layer is disposed adjacent to an uppermost CB layer of the one or more CB layers, and wherein the upper epitaxial layer comprises a plurality of junction barrier Schottky (JBS) implanted regions having the second conductivity type; and

a Schottky contact disposed adjacent to the upper epitaxial layer to form a Schottky junction, wherein the Schottky contact is formed from a metal or polysilicon, and wherein the Schottky contact is disposed adjacent to the plurality of JBS implanted regions.

2. The CB diode of claim 1 , wherein the Schottky contact is formed from titanium or nickel.

3. The CB diode of claim 1 , wherein the Schottky contact is formed from polysilicon having the first conductivity type.

4. The CB diode of claim 1 , wherein the CB diode comprises a junction barrier Schottky (JBS) diode or a merged PiN Schottky (MPS) diode.

5. The CB diode of claim 1 , wherein a sheet doping concentration of the plurality of JBS implanted regions is between approximately 1×10 13 cm −2 and approximately 2×10 16 cm −2 .

6. The CB diode of claim 1 , wherein a spacing between adjacent JBS implanted regions is between approximately 1 μm and approximately 10 μm.

7. The CB diode of claim 6 , wherein the spacing is between approximately 2 μm and approximately 5 μm.

8. The CB diode of claim 1 , wherein at least one JBS implanted region of the plurality of JBS implanted regions is not aligned with the plurality of buried regions.

9. The CB diode of claim 1 , wherein at least one JBS implanted region of the plurality of JBS implanted regions has a first shape and at least one buried region of the plurality of buried regions has a second shape different from the first shape.

10. The CB diode of claim 1 , wherein an axis of at least one JBS implanted region of the plurality of JBS implanted regions is not parallel to an axis of at least one buried region of the plurality of buried regions.

11. The CB diode of claim 1 , wherein each JBS implanted region of the plurality of JBS implanted regions comprises a variable doping profile.

12. The CB diode of claim 11 , wherein the variable doping profile comprises a linear function, a step-wise function, a monotonic function, or a normal distribution of sheet doping.

13. The CB diode of claim 1 , wherein the upper epitaxial layer comprises a plurality of trenches, wherein each trench of the plurality of trenches extends from a top surface of the upper epitaxial layer to a top surface of a JBS implanted region of the plurality of JBS implanted regions, and wherein the Schottky contact extends into the plurality of trenches and is disposed adjacent to the top surface of each JBS implanted region of the plurality of JBS implanted regions.

14. The CB diode of claim 13 , wherein a depth of at least one trench of the plurality of trenches is between approximately 0.1 μm and approximately 5 μm.

15. The CB diode of claim 13 , wherein at least trench of the plurality of trenches is not aligned with the plurality of buried regions.

16. A charge-balanced (CB) diode, comprising:
one or more charge-balanced (CB) layers, wherein each CB layer comprises:
an epitaxial layer having a first conductivity type; and
a plurality of buried regions having a second conductivity type implanted in the epitaxial layer, wherein a thickness of each buried region of the plurality of buried regions is less than a thickness of the epitaxial layer;

an upper epitaxial layer having the first conductivity type and disposed on top of the one or more CB layers, wherein the upper epitaxial layer comprises a plurality of junction barrier Schottky (JBS) implanted regions having the second conductivity type, and wherein a thickness of each JBS implanted region of the plurality of JBS implanted regions is less than a thickness of the upper epitaxial layer; and
a Schottky contact disposed on top of the upper epitaxial layer, wherein the Schottky contact is disposed adjacent to the plurality of JBS implanted regions.

17. The CB diode of claim 16 , wherein the Schottky contact is formed from titanium, nickel, or polysilicon having the first conductivity type.

18. The CB diode of claim 16 , wherein an effective sheet doping concentration of the plurality of buried regions is less than or equal to 1.1×10 13 cm′, and wherein a sheet doping concentration of the plurality of JBS implanted regions is between approximately 1×10 13 cm −2 and approximately 2×10 16 cm −2 .

19. The CB diode of claim 16 , wherein a spacing between adjacent JBS implanted regions of the plurality of implanted regions is between approximately 1 μm and approximately 5 μm.

20. The CB diode of claim 16 , wherein each JBS implanted region of the plurality of implanted regions comprises a variable doping profile such that a dopant concentration of each JBS implanted region increases into a depth of the respective JBS implanted region.

21. The CB diode of claim 16 , wherein the upper epitaxial layer comprises a plurality of trenches formed in a top surface of the upper epitaxial layer, wherein the Schottky contact is disposed adjacent to the top surface of the upper epitaxial layer and extends into each trench of the plurality of trenches to contact a top surface of each JBS implanted region of the plurality of implanted regions, and wherein a depth of at least one trench of the plurality of trenches is between approximately 0.3 μm and approximately 2 μm.

Assignees

• Gen Electric

Inventors

• Ghandi Reza
• Losee Peter Almern
• Bolotnikov Alexander Viktorovich
• Lilienfeld David Alan

Classifications

• H01L21/0455

  Electricity · mapped topic

• H01L29/872

  Electricity · mapped topic

• H01L29/1608

  Electricity · mapped topic

• H01L29/0634 Primary

  Electricity · mapped topic

• H01L29/6606

  Electricity · mapped topic