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Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back

US8969994B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8969994-B2
Application numberUS-201213585121-A
CountryUS
Kind codeB2
Filing dateAug 14, 2012
Priority dateAug 14, 2012
Publication dateMar 3, 2015
Grant dateMar 3, 2015

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.

First claim

Opening claim text (preview).

What is claimed is: 1. An MPS diode comprising: a III-nitride substrate having a first side and a second side opposing the first side, wherein the III-nitride substrate is characterized by a first conductivity type and a first dopant concentration; a III-nitride epitaxial structure comprising: a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions ext…

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What does patent US8969994B2 cover?
An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of…
Who is the assignee on this patent?
Raj Madhan M, Alvarez Brian, Bour David P, and 4 more
What technology area does this patent fall under?
Primary CPC classification H10D8/051. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).