Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016005884-A1
Application number	US-201314655658-A
Country	US
Kind code	A1
Filing date	Dec 25, 2013
Priority date	Dec 26, 2012
Publication date	Jan 7, 2016
Grant date	—

Abstract

A semiconductor device according to the present invention includes a semiconductor layer, a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined shape in the obverse surface portion, a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench, an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor layer in the unit cell, a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor layer, a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer, a first electrode contacting the obverse surface layer and forming an ohmic contact with the obverse surface layer, and a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer.

First claim

1 . A semiconductor device comprising:
a semiconductor layer; a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined shape in the obverse surface portion; a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench; an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor layer in the unit cell; a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor layer; a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer; a first electrode contacting the obverse surface layer and forming an ohmic contact with the obverse surface layer; and a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer.

2 . The semiconductor device according to claim 1 , wherein the first electrode is formed to cover the obverse surface of the semiconductor layer and includes an embedded portion that is embedded in the trench.

3 . The semiconductor device according to claim 2 , wherein the second conductivity type layer is formed so that the drift layer is exposed from a portion of the inner surface of the trench and
the embedded portion forms a Schottky junction with the exposed drift layer.

4 . The semiconductor device according to claim 1 , further comprising an insulating film formed on a portion of the inner surface of the trench.

5 . The semiconductor device according to claim 2 , wherein the second conductive type layer includes a high concentration layer that is formed at a portion exposed from the inner surface of the trench and has a higher concentration compared to other portions of the second conductivity type layer.

6 . The semiconductor device according to claim 5 , wherein the embedded portion forms an ohmic contact with the high concentration layer.

7 . The semiconductor device according to claim 2 wherein the embedded portion includes polysilicon, tungsten (W), titanium (Ti), or an alloy of the above materials.

8 . The semiconductor device according to claim 1 , wherein the semiconductor layer includes a wide bandgap semiconductor with a dielectric breakdown field of not less than 1.5 MV/cm.

9 . The semiconductor device according to claim 8 , wherein the wide bandgap semiconductor includes silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 0 3 ), or diamond.

10 . The semiconductor device according to claim 1 , wherein the obverse surface of the semiconductor layer is defined into an active region in which the unit cell is disposed and an outer peripheral region surrounding the active region, and
the semiconductor device further comprises: a removal region formed in the obverse surface portion of the semiconductor layer in the outer peripheral region; and a termination structure of the second conductivity type that is formed to conform to a portion or an entirety of an inner surface of the removal region and is disposed at a position deeper than the obverse surface layer.

Assignees

• Rohm Co Ltd

Inventors

• Aketa Masatoshi
• Miura Mineo

Classifications

• H10D62/8303

  Diamond · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/106

  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions · CPC title