Member for solid-state image pickup device and method for manufacturing solid-state image pickup device

Patent metadata

Field	Value
Publication number	US-9704915-B2
Application number	US-201514743723-A
Country	US
Kind code	B2
Filing date	Jun 18, 2015
Priority date	Jul 9, 2010
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

First claim

The invention claimed is:

1. A method for manufacturing a device,
providing a first member that has a first substrate including a first transistor and has a first structure including a first insulating film on the first substrate and a first conductive portion disposed in a groove of the first insulating film, the first structure having a first face formed by an upper face of the first insulating film and an upper face of the first conductive portion;
providing a second member that has a second substrate including a second transistor and has a second structure including a second insulating film on the second substrate and a second conductive portion disposed in a groove of the second insulating film, the second structure having a second face formed by an upper face of the second insulating film and an upper face of the second conductive portion; and
bonding the first member and the second member so that the first structure and the second structure are arranged between the first substrate and the second substrate, and so that the first conductive portion and the second conductive portion form an electrical connection;
wherein the second face has a concave portion formed by the upper face of the second conductive portion, and the upper face of the second conductive portion has a concave shape.

2. The method according to claim 1 , wherein a part of the upper face of the second conductive portion has the concave shape.

3. The method according to claim 1 , wherein a part of the concave portion of the second face is formed by the second insulating film.

4. The method according to claim 1 , wherein the second conductive portion is formed by a conductive material and a barrier metal film disposed between the conductive material and the second insulating film.

5. The method according to claim 4 , wherein the conductive material is copper, and the barrier metal film contains tantalum and/or titanium.

6. The method according to claim 4 , wherein the barrier metal film forms the concave portion of the second face.

7. The method according to claim 4 , wherein a bottom of the concave portion of the second face is formed by the conductive material.

8. The method according to claim 4 , wherein a top of the barrier metal film is positioned further from the second substrate than the bottom of the concave portion of the second face.

9. The method according to claim 1 , wherein the concave shape is formed by a wet etching, a dry etching, or a CMP treatment.

10. The method according to claim 1 , wherein the second conductive portion has a single damascene structure or a dual damascene structure.

11. The method according to claim 1 , wherein the second structure includes a plurality of wiring layers arranged between the second insulating film and the second substrate.

12. The method according to claim 1 , wherein the second conductive portion contains a conductive material having a higher coefficient of thermal expansion than an insulating material contained in the second insulating film.

13. The method according to claim 1 , wherein the first face has a concave portion formed by the first conductive portion.

14. The method according to claim 1 , wherein the first face has a convex portion formed by the first conductive portion.

15. The method according to claim 1 , wherein the first conductive portion is formed by a conductive material and a barrier metal film disposed between the conductive material and the first insulating film.

16. The method according to claim 1 , wherein before the bonding, a plasma irradiation is performed on the second face.

17. The method according to claim 1 , wherein a heat treatment is performed in the bonding.

18. The method according to claim 1 , wherein the first insulating film and the second insulating film are in contact with each other in the bonding.

19. The method according to claim 1 , wherein after the bonding, a thickness of the first substrate is reduced to become smaller than a thickness the second substrate.

20. The method according to claim 1 , wherein the first substrate includes a photoelectric converter.

21. A method for manufacturing a device, comprising;
providing a first member that has a first substrate including a first transistor and has a first structure including a first insulating film on the first substrate and a first conductive portion disposed in a groove of the first insulating film;
providing a second member that has a second substrate including a second transistor and has a second structure including a second insulating film on the second substrate and a second portion disposed in a groove of the second insulating film; and
bonding the first member and the second member so that the first structure and the second structure are arranged between the first substrate and the second substrate, and so that the first conductive portion and the second conductive portion form an electrical connection;
wherein the first structure has a first face formed by an upper face of the first insulating film and an upper face of the first portion,
wherein the second structure has a second face formed by an upper face of the second insulating film and an upper face of the second portion, and
wherein at least one of the first face and the second face has a concave portion.

Assignees

• Canon Kk

Inventors

• Endo Nobuyuki
• Itano Tetsuya
• Yamazaki Kazuo
• Watanabe Kyouhei
• Iwata Junji

Classifications

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/035

  by heating, e.g. melting or causing diffusion · CPC title

• H10W72/01951

  Changing the shapes of bond pads · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title