Method and apparatus for determining an overlay error

Patent metadata

Field	Value
Publication number	US-9704810-B2
Application number	US-201213570765-A
Country	US
Kind code	B2
Filing date	Aug 9, 2012
Priority date	Aug 30, 2011
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A method of, and associated apparatuses for, determining an overlay error resultant from structure defects such as asymmetry. The method comprises measuring scattering properties of a first target comprising a first structure and a second structure, constructing a model of the first structure using the measured scattering properties, the model comprising a first model structure corresponding to the first structure, modifying the model by overlaying the first model structure with an intermediate model structure, further modifying the model by replacing the intermediate model structure with a second model structure, corresponding to the second structure, calculating a second defect-induced overlay error between the first model structure and the second model structure, the first and second model structures being overlaid with respect to each other in the further modified model and determining an overlay error in a second target using the calculated second defect-induced overlay error.

First claim

The invention claimed is:

1. A method comprising:
measuring first scattering properties based on a first radiation detected from a first structure prior to formation of a second structure on the first structure;
constructing a first model structure based on the first scattering properties, the first model structure corresponding to the first structure;
overlaying the first model structure with an intermediate model structure;
calculating a first defect-induced overlay error between the first model structure and the intermediate model structure;
measuring second scattering properties based on a second radiation detected from the first and second structures, the second radiation being different from the first radiation;
constructing a second model structure based on the second radiation detected from the first and second structures and the first defect-induced overlay error;
replacing the intermediate model structure with the second model structure, the second model structure corresponding to the second structure;
calculating a second defect-induced overlay error between the first model structure and the second model structure, the first and second model structures being overlaid with respect to each other;
correcting an overlay measurement of a target based on the second defect-induced overlay error during production of the target using a lithography apparatus; and
adjusting a parameter of the lithography apparatus based on the second defect-induced overlay error to reduce overlay errors during production of a subsequent target using the lithography apparatus.

2. The method of claim 1 , further comprising selecting an optimum parameter for the overlay measurement of the target based on the second defect-induced overlay error.

3. The method of claim 1 , wherein the intermediate model structure is constructed to be free from defects.

4. The method of claim 1 , further comprising: defining a positional parameter of the first model structure to compensate for a defect in the first model structure; and
positioning the first and intermediate model structures relative to each other based on the defined positional parameter.

5. The method of claim 1 , wherein the replacing of the intermediate model structure with a second model structure comprises placing the second model structure in a same position as the intermediate model relative to the first model structure.

6. The method of claim 1 , wherein the first and intermediate model structures are overlaid relative to each other with zero offset.

7. The method of claim 1 , further comprising:
repeating the overlaying of the first model structure with the intermediate model structure for predetermined non-zero offsets, each of the predetermined non-zero offsets being different from each other;
repeating the calculating of the second defect-induced overlay error for each of the predetermined non-zero offsets to generate a plurality of second defect-induced overlay errors; and
the correcting of the overlay measurement of the target comprises selecting one second defect-induced overlay error from among the plurality of second defect-induced errors with closest correspondence to a measured overlay error of the target.

8. The method of claim 1 , wherein the calculating of the second defect-induced overlay error comprises calculating one or more parameters corresponding to defects in the second structure.

9. The method of claim 8 , wherein the calculating of the one or more parameters comprises minimizing the mean square error (ε) defined as:
ε=∥Δ OV m −ΔOV L1 −Σ i=1 M p i S i,L2 ∥ 2

wherein:
ΔOV m is a sum of variations in overlay measurements between different scattering property measurement recipes;
ΔOV L1 is a sum of variations in overlay calculations between the different scattering property measurement recipes corresponding to defects in the first structure; and

S i,L2 is a sensitivity of the variations in the overlay calculations between the different scattering property measurement recipes due to the one or more parameters.

10. The method of claim 8 , wherein the calculating of the second defect-induced overlay error further comprises calculating one or more parameters corresponding to defects in the first structure.

11. The method of claim 1 , wherein the correcting of the overlay measurement of the target comprises calculating a difference between the second defect-induced overlay error and a measured overlay error of the target.

12. The method of claim 1 , further comprising repeating the calculating of the second defect-induced overlay error for a plurality of parameter values of the first or second model structure for a plurality of scattering property measurement recipes.

13. The method of claim 1 , further comprising correcting the overlay measurement at a plurality of pixels in a pupil plane of an angular resolved scatterometer.

14. The method of claim 1 , wherein the first and second defect-induced overlay errors are resultant from process-induced asymmetries in the first structure and from process-induced asymmetries in the first and second structures, respectively.

15. A non-transitory computer readable storage medium having program instructions stored thereon, execution of which by a processor causes the processor to perform operations comprising:
measuring first scattering properties based on a first radiation detected from a first structure prior to formation of a second structure on the first structure;
constructing a first model structure based on the first scattering properties, the first model structure corresponding to the first structure;
overlaying the first model structure with an intermediate model structure;
calculating a first defect-induced overlay error between the first model structure and the intermediate model structure;
measuring second scattering properties based on a second radiation detected from the first and second structures, the second radiation being different from the first radiation;
constructing a second model structure based on the second radiation detected from the first and second structures and the first defect-induced overlay error;
replacing the intermediate model structure with the second model structure, the second model structure corresponding to the second structure;
calculating a second defect-induced overlay error between the first model structure and the second model structure, the first and second model structures being overlaid with respect to each other;
correcting an overlay measurement of a target based on the second defect-induced overlay error during production of the target using a lithography apparatus; and
adjusting a parameter of the lithography apparatus based on the second defect-induced overlay error to reduce an overlay error during production of a subsequent target using the lithography apparatus.

16. A lithographic system comprising:
a lithography apparatus comprising:
an illumination system configured to illuminate a pattern, and
a projection system configured to project an image of the pattern onto a substrate; and

an inspection apparatus comprising:
an optical system configured to illuminate a first structure and a second structure positioned on the first structure;
a detector configured to:
measure first scattering properties based on a first radiation detected from the first structure prior to formation of the second structure on the first structure, and
measure second scattering properties based on a second radiation detected from the first and second structures, the second radiation being different from the f

Assignees

• Den Boef Arie Jeffrey
• Asml Netherlands Bv

Inventors

• Den Boef Arie Jeffrey

Classifications

• H10W46/503

  Located in scribe lines · CPC title

• H10W46/501

  for use before dicing · CPC title

• H10W46/301

  for alignment · CPC title

• H10W46/101

  characterised by the type of information, e.g. logos or symbols · CPC title

• H10W46/00 Primary

  Marks applied to devices, e.g. for alignment or identification · CPC title