Oxide and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9704707-B2
Application number	US-201615010377-A
Country	US
Kind code	B2
Filing date	Jan 29, 2016
Priority date	Feb 2, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal atomic arrangement in the case of a single crystal. The oxide has a homologous structure of indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The oxide has a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide. In a Voronoi diagram having a plurality of Voronoi regions obtained through a Voronoi analysis of the lattice point group, a proportion of hexagonal Voronoi regions is higher than or equal to 78% and lower than or equal to 100%.

First claim

The invention claimed is:

1. An oxide comprising:
a homologous structure comprising indium, an element M, and zinc,
wherein the element M is one of aluminum, gallium, yttrium, and tin,
wherein the oxide includes a hexagonal atomic arrangement in the case of a single crystal,
wherein the oxide includes a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide, and
wherein a proportion of hexagonal Voronoi regions to all Voronoi regions in a Voronoi diagram obtained through a Voronoi analysis of the lattice point group is higher than or equal to 78% and lower than or equal to 100%.

2. The oxide according to claim 1 ,
wherein the first region is subjected to fast Fourier transform to obtain a first image,
wherein the first image is subjected to mask processing except for a range from 2.8 nm −1 to 5.0 nm −1 to obtain a second image,
wherein the second image is subjected to inverse fast Fourier transform to obtain a third image,
wherein noise is removed from the third image to obtain a fourth image, and
wherein lattice points included in the lattice point group are points with maximal luminance in the fourth image.

3. The oxide according to claim 2 , wherein luminance within a 0.05-nm radius in the third image is averaged to remove the noise.

4. The oxide according to claim 3 ,
wherein a first step of extracting a second point with highest luminance within a 0.22-nm radius from a first point and a second step of extracting a third point with highest luminance within a 0.22-nm radius from the second point are repeated until a point with highest luminance is fixed as one of the points with maximal luminance, and
wherein the others of the points with maximal luminance are determined in a manner similar to that for the one of the points with maximal luminance using a point more than 0.22 nm away from the one of the points with maximal luminance as the first point.

5. An oxide comprising:
a homologous structure comprising indium, an element M, and zinc,
wherein the element M is one of aluminum, gallium, yttrium, and tin,
wherein the oxide includes a hexagonal atomic arrangement in the case of a single crystal,
wherein the oxide includes a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide,
wherein the lattice point group comprises lattice points comprising a first lattice point, and second to seventh lattice points adjacent to the first lattice point,
wherein to obtain a strain rate, a regular hexagon in which a distance between a center point and a vertex is an average distance between the first lattice point and each of the second to seventh lattice points is provided such that the center point overlaps with the first lattice point; the regular hexagon is rotated around the center point such that an average deviation amount between the vertex of the regular hexagon and each of the second to seventh lattice points becomes as small as possible; and the average deviation amount is divided by the distance between the center point and the vertex of the regular hexagon, and
wherein an average strain rate in the first region is less than 0.2.

6. The oxide according to claim 5 ,
wherein the first region is subjected to fast Fourier transform to obtain a first image,
wherein the first image is subjected to mask processing except for a range from 2.8 nm −1 to 5.0 nm −1 to obtain a second image,
wherein the second image is subjected to inverse fast Fourier transform to obtain a third image,
wherein noise is removed from the third image to obtain a fourth image, and
wherein the lattice points included in the lattice point group are points with maximal luminance in the fourth image.

7. The oxide according to claim 6 , wherein luminance within a 0.05-nm radius in the third image is averaged to remove the noise.

8. The oxide according to claim 7 ,
wherein a first step of extracting a second point with highest luminance within a 0.22-nm radius from a first point and a second step of extracting a third point with highest luminance within a 0.22-nm radius from the second point are repeated until a point with highest luminance is fixed as one of the points with maximal luminance, and
wherein the others of the points with maximal luminance are determined in a manner similar to that for the one of the points with maximal luminance using a point more than 0.22 nm away from the one of the points with maximal luminance as the first point.

9. An oxide comprising:
indium, an element M, and zinc,
wherein the element M is one of aluminum, gallium, yttrium, and tin,
wherein a crystal structure in the oxide is capable of having a homologous structure,
wherein the oxide includes a plurality of flat-plate-like crystal regions,
wherein c-axes of the plurality of flat-plate-like crystal regions are approximately parallel to a normal vector of a top surface of the oxide,
wherein an average size of the plurality of flat-plate-like crystal regions in a direction parallel to the top surface of the oxide is larger than 3 nm in a transmission electron microscopy image of a cross section of the oxide taken along a plane perpendicular to the top surface, and
wherein no clear grain boundary is observed between the plurality of flat-plate-like crystal regions.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426 Primary

  Oxides · CPC title