Manufacturing method of oxide film and sputtering apparatus

Patent metadata

Field	Value
Publication number	US-2016247902-A1
Application number	US-201615012097-A
Country	US
Kind code	A1
Filing date	Feb 1, 2016
Priority date	Feb 20, 2015
Publication date	Aug 25, 2016
Grant date	—

Abstract

Provided is a method for manufacturing an oxide using a sputtering apparatus including a target unit and a substrate holder. In the target unit, a first target and a second target are located with a predetermined space therebetween so that front surfaces thereof face each other. The substrate holder and a side of the target unit are located with a predetermined space therebetween. The method includes providing a substrate for the substrate holder, generating plasma including an ion between the first and the second targets by application of a potential therebetween, generating a sputtering particle including the oxide by a collision of the ion with the first and the second targets, and depositing the sputtering particle on the substrate while the target unit is moved in a direction parallel to a formation surface of the substrate.

First claim

1 . A method for manufacturing an oxide film using a sputtering apparatus,
the sputtering apparatus including:
a target unit including a first target, a second target, a first magnet, and a second magnet; and
a substrate holder,
wherein the first magnet is located on a rear surface of the first target,
wherein the second magnet is located on a rear surface of the second target,
wherein the first target and the second target are located with a predetermined space therebetween so that front surfaces of the first target and the second target face each other, and
wherein the substrate holder and a side of the target unit are located with a predetermined space therebetween,
comprising the steps of: providing a substrate for the substrate holder; generating plasma including an ion between the first target and the second target by application of a potential to each of the first target and the second target; generating a sputtering particle including an oxide by a collision of the ion with the first target and the second target; and forming an oxide film by depositing the sputtering particle on the substrate while the target unit is moved in a direction parallel to a formation surface of the substrate.

2 . The method for manufacturing an oxide film, according to claim 1 ,
wherein the sputtering apparatus further includes a member having a slit, and wherein the member having the slit is located so that the slit is positioned between the target unit and the substrate.

3 . The method for manufacturing an oxide film, according to claim 1 ,
wherein a surface temperature of the substrate when the oxide film is formed is higher than or equal to 100° C. and lower than 500° C.

4 . A method for manufacturing an oxide film using a sputtering apparatus,
the sputtering apparatus including:
a first target unit including a first target, a second target, a first magnet, and a second magnet;
a second target unit including a third target, a fourth target, a third magnet, and a fourth magnet; and
a substrate holder,
wherein the first magnet is located on a rear surface of the first target,
wherein the second magnet is located on a rear surface of the second target,
wherein the first target and the second target are located with a predetermined space therebetween so that front surfaces of the first target and the second target face each other,
wherein the third magnet is located on a rear surface of the third target,
wherein the fourth magnet is located on a rear surface of the fourth target,
wherein the third target and the fourth target are located with a predetermined space therebetween so that front surfaces of the third target and the fourth target face each other, and
wherein the substrate holder, a side of the first target unit, and a side of the second target unit are located with a predetermined space therebetween,
comprising the steps of: providing a substrate for the substrate holder; generating plasma including an ion between the first target and the second target by application of a potential to each of the first target and the second target; generating a first sputtering particle including an oxide by a collision of the ion with the first target and the second target; generating plasma including an ion between the third target and the fourth target by application of a potential to each of the third target and the fourth target; generating a second sputtering particle including an oxide by a collision of the ion with the third target and the fourth target; and forming an oxide film by depositing the first sputtering particle and the second sputtering particle on the substrate while the first target unit and the second target unit are moved in a direction parallel to a formation surface of the substrate.

5 . The method for manufacturing an oxide film, according to claim 4 ,
wherein the oxide film includes a first oxide film and a second oxide film, wherein the first oxide film is formed by depositing the first sputtering particle on the substrate, and wherein the second oxide film is formed by depositing the second sputtering particle on the first oxide film.

6 . The method for manufacturing an oxide film, according to claim 4 ,
wherein a moving speed of the first target unit is different from a moving speed of the second target unit.

7 . The method for manufacturing an oxide film, according to claim 4 ,
wherein the sputtering apparatus further includes a member having a slit, and wherein the member having the slit is located so that the slit is positioned between the first target unit and the substrate.

8 . The method for manufacturing an oxide film, according to claim 4 ,
wherein the sputtering apparatus further includes a member having a slit, wherein the member having the slit is located so that the slit is positioned between the first target unit and the substrate, and wherein part of the member having the slit is located between the first target unit and the second target unit.

9 . The method for manufacturing an oxide film, according to claim 4 ,
wherein a surface temperature of the substrate when the oxide film is formed is higher than or equal to 100° C. and lower than 500° C.

10 . A sputtering apparatus comprising:
a target unit including a first target holder, a second target holder, a first magnet, and a second magnet; and a substrate holder, wherein the first magnet is located on a rear surface of the first target holder, wherein the second magnet is located on a rear surface of the second target holder, wherein the first target holder and the second target holder are located with a predetermined space therebetween so that front surfaces of the first target holder and the second target holder face each other, wherein the substrate holder and a side of the target unit are located with a predetermined space therebetween, and wherein the target unit is configured to move in a direction parallel to the substrate holder.

11 . The sputtering apparatus according to claim 10 , further comprising a first target and a second target,
wherein the first target is provided for the first target holder, and wherein the second target is provided for the second target holder.

12 . The sputtering apparatus according to claim 10 , further comprising a member having a slit,
wherein the member having the slit is located so that the slit is positioned between the target unit and the substrate holder.

13 . The sputtering apparatus according to claim 10 , further comprising a heating mechanism on a rear surface of the substrate holder.

14 . A sputtering apparatus comprising:
a first target unit including a first target holder, a second target holder, a first magnet, and a second magnet; a second target unit including a third target holder, a fourth target holder, a third magnet, and a fourth magnet; and a substrate holder, wherein the first magnet is located on a rear surface of the first target holder, wherein the second magnet is located on a rear surface of the second target holder, wherein the first target holder and the second target holder are located with a predetermined space therebetween so that front surfaces of the first target holder and the second target holder face each other, wherein the third magnet is located on a rear surface of the third target holder, wherein the fourth magnet is located on a rear surface of the fourth target holder, wherein the third target holder and the fourth target holder are located with a predetermined space therebetween so that front surfaces of the third target holder and the fourth target holder face each

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/3456

  Polycrystalline · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title