Catalyst
US-2015344595-A1 · Dec 3, 2015 · US
US8962875B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8962875-B2 |
| Application number | US-201213418747-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 13, 2012 |
| Priority date | Nov 30, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.
Opening claim text (preview).
The invention claimed is: 1. A metal-containing precursor comprising an enolate ligand, said metal-containing precursor represented by the following Formula 1: wherein M is a metal with an oxidation state of (n), from +2 to +6, selected from the Lanthanides or Group 3 to Group 16, of the Periodic Table; R 1 , R 2 and R 3 are independently selected from the group consist…
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