Metal-enolate precursors for depositing metal-containing films

US8962875B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8962875-B2
Application numberUS-201213418747-A
CountryUS
Kind codeB2
Filing dateMar 13, 2012
Priority dateNov 30, 2010
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.

First claim

Opening claim text (preview).

The invention claimed is: 1. A metal-containing precursor comprising an enolate ligand, said metal-containing precursor represented by the following Formula 1: wherein M is a metal with an oxidation state of (n), from +2 to +6, selected from the Lanthanides or Group 3 to Group 16, of the Periodic Table; R 1 , R 2 and R 3 are independently selected from the group consist…

Assignees

Inventors

Classifications

  • Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

  • Chemistry & Metallurgy · mapped topic

  • C07F17/00Primary

    Chemistry & Metallurgy · mapped topic

  • C07F7/28Primary

    Chemistry & Metallurgy · mapped topic

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8962875B2 cover?
Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.
Who is the assignee on this patent?
Norman John Anthony Thomas, Lei Xinjian, Air Prod & Chem
What technology area does this patent fall under?
Primary CPC classification C07F17/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).