Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
US9692325B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9692325-B2 |
| Application number | US-201113818339-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2011 |
| Priority date | Sep 8, 2010 |
| Publication date | Jun 27, 2017 |
| Grant date | Jun 27, 2017 |
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Official abstract text for this publication.
In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10 8 to about 10 12 ohms per square.
Opening claim text (preview).
What is claimed is: 1. An electrostatic chuck, comprising: a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising a coating covering at least a portion of an outside edge of the gas seal ring and at least a portion of an outside edge of the electrostatic chuck and comprising at least a portion of an electrical path to ground, the conductive path comprising a surface resistivity in the range of from about 10 5 ohms per square to about 10 7 ohms per square; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10 8 to about 10 12 ohms per square, the main field area comprising at least one embossment extending above surrounding portions of the main field area; and a conductive coating on a workpiece-contacting surface of the at least one embossment. 2. An electrostatic chuck according to claim 1 , wherein the conductive path comprises diamond-like carbon. 3. An electrostatic chuck according to claim 2 , wherein the conductive path comprises doped diamond-like carbon. 4. An electrostatic chuck according to claim 3 , wherein the conductive path comprises hydrogenated carbon doped with nitrogen. 5. An electrostatic chuck according to claim 1 , wherein the conductive path comprises a coating of a thickness less than about 1 micron. 6. An electrostatic chuck according to claim 1 , wherein the conductive path wraps underneath an insulator layer of the electrostatic chuck. 7. An electrostatic chuck according to claim 1 , wherein the main field area comprises silicon carbide. 8. An electrostatic chuck according to claim 7 , wherein the main field area comprises a surface resistivity in the range of from about 10 9 to about 10 11 ohms per square. 9. An electrostatic chuck according to claim 1 , wherein the electrostatic chuck comprises a conductive grounding layer, at least a portion of which is underneath an insulator layer of the electrostatic chuck, the conductive grounding layer electrically contacting the conductive path. 10. An electrostatic chuck according to claim 9 , wherein at least a portion of an outside edge of the conductive grounding layer is covered by the conductive path. 11. An electrostatic chuck according to claim 9 , wherein the conductive grounding layer electrically contacts a grounding pin of the electrostatic chuck. 12. An electrostatic chuck according to claim 9 , further comprising an electrically conductive epoxy layer underlying at least a portion of the conductive grounding layer. 13. An electrostatic chuck according to claim 1 , wherein the conductive path of the electrostatic chuck and the conductive coating on the workpiece-contacting surface of the at least one embossment each comprise a diamond like carbon coating. 14. An electrostatic chuck according to claim 1 , wherein a base of the electrostatic chuck comprises a chamfered area on one or more edges of the base. 15. An electrostatic chuck according to claim 14 , wherein the conductive path electrically contacts the base through a conductive epoxy in the chamfered area. 16. An electrostatic chuck according to claim 15 , wherein the conductive path comprises a coating covering at least a portion of an outside edge of the electrostatic chuck, the conductive path wrapping underneath an insulator layer of the electrostatic chuck. 17. An electrostatic chuck according to claim 1 , further comprising at least one conductive pattern on the workpiece-contacting surface of the electrostatic chuck, the at least one conductive pattern electrically contacting the conductive path. 18. An electrostatic chuck according to claim 17 , wherein the at least one conductive pattern comprises a metal coated with a conductive coating. 19. An electrostatic chuck according to claim 17 , wherein the at least one conductive pattern comprises at least one of: a spoke extending towards the center of the electrostatic chuck; a ring around a gas hole of the electrostatic chuck; and a trace between two embossments on the workpiece-contacting surface of the electrostatic chuck. 20. An electrostatic chuck according to claim 1 , wherein the main field area of the electrostatic chuck comprises a polymer. 21. An electrostatic chuck according to claim 20 , wherein the main field area comprises at least one embossment extending above surrounding portions of the main field area, the at least one embossment comprising a polymer. 22. An electrostatic chuck according to claim 20 , wherein the main field area comprises a surface resistivity in the range of from about 10 8 to about 10 10 ohms per square. 23. An electrostatic chuck according to claim 20 , wherein the conductive path comprises a conductive coating, the conductive coating also covering at least a portion of the main field area. 24. An electrostatic chuck, comprising: a conductive path electrically connected to at least a portion of a workpiece-contacting surface of the electrostatic chuck, the conductive path comprising a coating covering at least a portion of an outside edge of the electrostatic chuck and comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10 8 to about 10 10 ohms per square, the main field area comprising a blanket layer and at least one embossment extending above surrounding portions of the main field area, the blanket layer and the at least one embossment each comprising a polymer comprising carbon nanotubes; the conductive path further comprising a portion extending from under the blanket layer to the coating covering the at least a portion of the outside edge of the electrostatic chuck; and a conductive coating on a workpiece-contacting surface of the at least one embossment. 25. An electrostatic chuck according to claim 24 , wherein the polymer comprises at least one of: carbon nanotube filled polyether imide; carbon nanotube filled polyether ether ketone; and carbon nanotube filled polyimide.
Details of electrostatic chucks · CPC title
using electrostatic chucks · CPC title
using mechanical means, e.g. clamps or pinches · CPC title
for supporting or gripping · CPC title
Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect · CPC title
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