Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate

Patent metadata

Field	Value
Publication number	US-9178011-B2
Application number	US-201314137003-A
Country	US
Kind code	B2
Filing date	Dec 20, 2013
Priority date	Mar 13, 2013
Publication date	Nov 3, 2015
Grant date	Nov 3, 2015

Abstract

A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base dielectric layer, across the conductive layer to affect the dielectric layer. The process can be used to form capacitor structure for anisotropic dielectric materials, along the direction of high dielectric constant.

First claim

What is claimed is:

1. A method for forming a capacitor, the method comprising forming a seed layer;
forming a first dielectric layer over the seed layer,
wherein the first dielectric layer is formed with a first crystallographic orientation,
wherein a thickness of the first dielectric layer is between 50 nm and 500 nm,
wherein the first dielectric layer has an anisotropic dielectric constant property,
wherein the anisotropic dielectric constant property is characterized as having a first dielectric constant value in a first crystallographic direction and a second dielectric constant value in a second crystallographic direction,
wherein the first dielectric constant value is greater than the second dielectric constant value, and
wherein the first crystallographic direction is parallel to a lateral surface of the first dielectric layer or perpendicular to the lateral surface of the first dielectric layer;

forming a first conductive layer over the first dielectric layer;
forming a second dielectric layer over the first conductive layer,
wherein the composition of the second dielectric layer is the same as the composition of the first dielectric layer,
wherein the second dielectric layer is formed with the first crystallographic orientation; and

forming a second conductive layer over the second dielectric layer.

2. The method as in claim 1 wherein the first conductive layer comprises a crystal structure and lattice parameters that match at least 80% to the crystal structure and lattice parameters of the first dielectric layer.

3. The method as in claim 1 further comprising annealing the first dielectric layer before forming the first conductive layer.

4. The method as in claim 3 wherein the annealing is performed for less than 30 minutes at a temperature between 300 and 450 C.

5. The method as in claim 1 further comprising annealing the first conductive layer before forming the second dielectric layer.

6. The method as in claim 1 wherein the first crystallographic direction is perpendicular to the lateral surface of the first dielectric layer.

7. The method as in claim 1 wherein the first crystallographic direction is parallel to the lateral surface of the first dielectric layer.

8. The method as in claim 1 wherein the seed layer comprises titanium oxide nanorods.

9. The method as in claim 8 wherein forming the seed layer comprises forming a set of parallel grooves on a substrate, depositing the titanium oxide nanorods into the grooves, aligning the titanium oxide nanorods in the grooves by mechanical agitation.

10. The method as in claim 9 wherein each of the set of parallel grooves has a depth of between about 0.3 to 0.8 times a diameter of the titanium oxide nanorods.

11. The method as in claim 9 wherein groves in the set of parallel grooves have a separation distance of between about 1 to 5 times a diameter of the titanium oxide nanorods.

12. The method as in claim 1 wherein the first conductive layer vanadium oxide.

13. The method as in claim 1 wherein the first conductive layer niobium oxide.

14. The method as in claim 1 wherein the first conductive layer chromium oxide.

15. The method as in claim 1 wherein the first dielectric layer comprises titanium oxide.

16. The method as in claim 15 wherein titanium oxide of the first dielectric layer has a rutile structure.

17. The method as in claim 1 wherein the first conductive layer is formed within a trench in the first dielectric layer, and wherein the second dielectric layer is formed within the trench in the first conductive layer.

18. The method as in claim 17 wherein the second conductive layer is formed within the trench in the second dielectric layer.

19. The method as in claim 1 wherein the first conductive layer has a thickness of between about 1 nm and 30 nm.

20. The method as in claim 1 wherein the second dielectric layer has a thickness of between about 3 nm and 15 nm.

Assignees

• Intermolecular Inc

Inventors

• Barabash Sergey
• Pramanik Dipankar

Classifications

• H10P14/6933

  the material containing at least one rare earth element, e.g. silicate of scandium or silicate of yttrium · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title

• H10D64/0135

  by deposition of a layer, e.g. metal, metal compound or polysilicon, followed by transformation thereof into the insulator · CPC title