Laminating magnetic cores for on-chip magnetic devices

Patent metadata

Field	Value
Publication number	US-9691425-B2
Application number	US-201313969786-A
Country	US
Kind code	B2
Filing date	Aug 19, 2013
Priority date	Feb 6, 2013
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

First claim

What is claimed is:

1. A method of fabricating an on-chip lamination structure, the method comprising:
depositing a seed layer on a substrate;
patterning a photoresist layer to form an opening to the seed layer;
forming the on-chip lamination structure within the opening, the on-chip lamination structure consisting of a magnetic unit layer consisting of first and second magnetic layers and a conductive non-magnetic spacer layer therebetween; and a resistive spacer disposed on the magnetic unit layer, wherein each respective layer is stackedly arranged, wherein the resistive spacer is a resistive material selected from the group consisting of selenium, bismuth, tellurium, phosphorous, sulfur, germanium, antimony, and alloys thereof that can be electrochemically reduced, wherein the resistive spacer is thicker and more resistive than the conductive non-magnetic spacer layer in the magnetic unit layer, wherein the conductive non-magnetic spacer layer is at a thickness of less than 300 Angstroms, and wherein the resistive spacer is at a thickness of 100 nanometers to 1 micron, wherein forming the on-chip lamination structure comprises electroplating the first and second magnetic layers, the conductive non-magnetic layer, and the resistive spacer; and
removing the photoresist layer and a portion of the seed layer surrounding the on-chip lamination structure.

Assignees

• IBM

Inventors

• Fontana Jr Robert E
• Gallagher William J
• Herget Philipp
• O'Sullivan Eugene J
• Romankiw Lubomyr T
• Wang Naigang
• Webb Bucknell C

Classifications

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• C25D7/001

  Magnets · CPC title

• H01F10/3231

  via a non-magnetic spacer · CPC title

• C25D3/58

  containing more than 50% by weight of copper · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title