Lithographic apparatus and device manufacturing method

Patent metadata

Field	Value
Publication number	US-9690210-B2
Application number	US-201214234352-A
Country	US
Kind code	B2
Filing date	Jul 20, 2012
Priority date	Aug 18, 2011
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A lithographic apparatus is provided and configured to project a patterned beam of radiation onto a substrate. The apparatus has a measurement system to provide measurement data related to a thickness of a resist layer on the substrate, and a controller to control the operation of the lithographic apparatus such that a radiation intensity level in the patterned beam to be projected onto the substrate is controlled based on the measurement data.

First claim

The invention claimed is:

1. A lithographic apparatus, configured to project an exposure beam of radiation onto a substrate, the apparatus comprising:
a measurement system, configured to provide measurement data related to a thickness of a resist layer on a first region of the substrate, and configured to measure intensity of radiation derived from the exposure beam of radiation to expose the resist layer of the first region of the substrate, that is redirected back from the layer of resist to generate the measurement data; and
a controller, configured to control the operation of the lithographic apparatus such that a radiation intensity level in an exposure beam to be subsequently projected onto a different second region of the same substrate is controlled based on the measurement data.

2. The lithographic apparatus according to claim 1 , further comprising a programmable patterning device, configured to provide the exposure beam of radiation, wherein the controller is configured to control the operation of the programmable patterning device in order to control the radiation intensity level in the exposure beam of radiation.

3. The lithographic apparatus according to claim 2 , wherein the controller is configured to control the programmable patterning device such that the lithographic apparatus projects onto the substrate an exposure beam in which the intensity of the radiation varies between a minimum and a maximum intensity level according to a desired pattern; and
the controller is configured such that, in order to adjust the radiation intensity level in the exposure beam of radiation, it adjusts a minimum radiation intensity level, a maximum radiation intensity level, an intermediate intensity level, or any combination thereof, to be used in providing the desired pattern.

4. The lithographic apparatus according to claim 1 , wherein the measurement system is configured to provide measurement data related to the thickness of the resist layer in an area of the substrate based on a measurement taken before the exposure beam of radiation is projected onto the area of on the substrate; and
the controller is configured to control the operation of the lithographic apparatus when the exposure beam of radiation is projected onto the area of the substrate based on the measurement.

5. The lithographic apparatus according to claim 4 , wherein the measurement system is configured to provide measurement data related to the thickness of a resist layer on a substrate in a plurality of areas across the substrate based on a plurality of measurements taken before the exposure patterned beam of radiation is projected onto any such areas of the substrate; and
the controller is configured to control the operation of the lithographic apparatus based on the measurement data for each respective area of the substrate when the exposure beam of radiation is subsequently projected onto each of the areas of the substrate.

6. The lithographic apparatus according to claim 4 , wherein the measurement system is configured to take measurements to provide measurement data related to the thickness of the resist layer for a first area of the substrate while the exposure beam of radiation is projected onto a different second area of the substrate.

7. The lithographic apparatus according to claim 1 , wherein the controller is configured to compare the measured intensity level of the radiation redirected back from the layer of resist with the intensity of the exposure beam of radiation intended to be projected onto the substrate at a location corresponding to the location at which the intensity level is measured to determine a measure of the reflectivity of the resist layer, wherein the intensity of the exposure beam of radiation intended to be projected onto the substrate is the intensity prior to the incidence of the exposure beam of radiation onto the substrate.

8. The lithographic apparatus according to claim 7 , further comprising a programmable patterning device and wherein the controller is configured to compare the measured intensity level of the radiation redirected back from the layer of resist with data corresponding to a control signal provided to the programmable patterning device used to set the programmable patterning device to provide a desired radiation intensity level in the exposure beam of radiation projected onto the substrate at the location corresponding to the measured intensity level.

9. The lithographic apparatus according to claim 7 , wherein the controller is configured to use the measure of the reflectivity of the resist layer to control the intensity of the exposure beam of radiation to be projected onto the substrate such that a desired pattern of radiation dose received by the resist layer is provided.

10. The lithographic apparatus according to claim 1 , wherein the measurement system is configured to measure the intensity of the exposure beam of radiation projected onto the layer of resist, wherein the measured intensity of the exposure beam of radiation projected onto the layer of resist is the intensity of the exposure beam of radiation prior to incidence onto the layer of resist; and
the controller is configured to compare the measured intensity of the exposure beam of radiation projected onto a location on the resist layer with the measured intensity of radiation redirected back from the location on the resist layer in order to determine a measure of the reflectivity of the resist layer.

11. The lithographic apparatus according to claim 1 , wherein the measurement system is further configured to project a beam of radiation onto the resist layer that has a lower intensity than the exposure beam of radiation, and to measure the intensity of the lower intensity radiation redirected back from the resist layer; and
the controller is configured to compare the intensity of the beam of lower intensity radiation projected onto the resist layer by the measurement system with the intensity of the lower intensity radiation redirected back from the resist layer in order to determine a measure of the reflectivity of the resist layer.

12. The lithographic apparatus according to claim 1 , comprising a partial reflector arranged such that the exposure beam of radiation passes through the partial reflector before it is incident on the substrate and such that radiation redirected back from the resist layer on the substrate is reflected by the partial reflector into a radiation intensity sensor.

13. The lithographic apparatus according to claim 12 , wherein the measurement system is configured to measure the intensity of the exposure beam of radiation projected onto the layer of resist; and
the controller is configured to compare the measured intensity of the exposure beam of radiation projected onto a location on the resist layer with the measured intensity of radiation redirected back from the location on the resist layer in order to determine a measure of the reflectivity of the resist layer,
wherein the partial reflector is configured to reflect a portion of the exposure beam of radiation before it is incident on the substrate to a second radiation intensity sensor.

14. The lithographic apparatus according to claim 1 , wherein the measurement system is configured to measure the thickness of the resist layer.

15. The lithographic apparatus according to claim 14 , wherein the controller is configured to determine an expected reflectivity of the resist layer based on the measured thickness of the resist layer.

16. The lithographic apparatus according to claim 14 , wherein the measurement system comprises a scatteromete

Assignees

• Bleeker Arno Jan
• De Winter Laurentius Cornelius
• Asml Netherlands Bv

Inventors

• Bleeker Arno Jan
• De Winter Laurentius Cornelius

Classifications

• G03F7/70608 Primary

  Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist · CPC title

• G03F7/70191

  Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like · CPC title

• G03F7/70558

  Dose control, i.e. achievement of a desired dose · CPC title

• G03F7/70291

  Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices · CPC title