Lithographic focus and dose measurement using a 2-D target

Patent metadata

Field	Value
Publication number	US-9436099-B2
Application number	US-201414273707-A
Country	US
Kind code	B2
Filing date	May 9, 2014
Priority date	Oct 6, 2008
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

First claim

The invention claimed is:

1. A method comprising:
printing a marker on a substrate using an exposure apparatus and a mask, the mask including a pattern for creating the marker, wherein the marker comprises a two-dimensional array of structures formed by repeated exposure of the pattern, such that the structures along an x direction of the two-dimensional array are sensitive to dose variations, but are not sensitive to focus variations, and the structures along a y direction of the two-dimensional array are sensitive to both dose and focus variations; and
measuring a property of the substrate that has been exposed by the exposure apparatus and the mask, the measuring comprising:
projecting a radiation beam onto the marker on the substrate;
detecting radiation reflected from the marker on the substrate; and
determining, from the properties of the reflected radiation, at least one of the focus and the dose of the exposure apparatus.

2. The method according to claim 1 , wherein a result of at least one of the focus and the dose related measurements of the exposure apparatus being measured is fed back to the exposure apparatus for correction of any errors in at least one of the focus and the dose related properties.

3. The method according to claim 1 , further comprising:
printing the marker on the substrate using at least one of focus and dose offsets;
measuring a variation of properties of the reflected radiation as a function of the at least one of focus and dose offsets; and
storing a library of relationships between properties of the reflected radiation and at least one of focus and dose offsets based on the measurement of the variation of the properties.

4. The method according to claim 1 , further comprising:
simulating at least one of the marker pattern and the reflected radiation in response to various offsets of at least one of focus and dose of the exposure apparatus; and
storing a mathematical model of the at least one of the marker pattern and the reflected radiation characteristics for various focus and dose offsets based on the simulations.

5. The method of claim 1 , wherein the projecting a radiation beam comprises projecting a radiation beam having an annular shape, such that diffraction of the radiation beam due to the marker in the y-direction is discernable from diffraction of the radiation beam due to the marker in the x-direction.

6. An inspection apparatus configured to measure a property of a substrate on which a marker has been printed by an exposure apparatus using a mask containing a pattern comprising a two-dimensional array of structures arranged such that the marker includes repeating structures formed by repeated exposure of the pattern, such that the structures along an x direction of the two-dimensional array are sensitive to dose variations, but are not sensitive to focus variations, and the structures along a y direction of the two-dimensional array are sensitive to both dose and focus variations, the inspection apparatus comprising:
a radiation source;
a projection system configured to direct radiation from the radiation source onto the marker;
a detector configured to detect radiation reflected from the marker; and
a processor configured to determine properties of the reflected radiation and, from the properties of the reflected radiation, determine at least one of focus and dose related properties of the exposure apparatus used to print the marker.

7. The inspection apparatus according to claim 6 , wherein the processor is configured to determine the at least one of focus and dose related properties of the exposure apparatus by comparing the reflected radiation with a library of at least one of previously measured, simulated and extrapolated relationships between properties of the reflected radiation and the at least one of focus and dose related properties.

8. The inspection apparatus of claim 6 , wherein the radiation directed onto the marker has an annular shape, such that diffraction of the radiation due to the marker in the y-direction is discernable from diffraction of the radiation due to the marker in the x-direction.

9. A lithographic cell comprising:
a coater arranged to coat a substrate with a radiation sensitive layer;
an exposure apparatus configured to expose an image onto the radiation sensitive layer of the substrate coated by the coater;
a developer configured to develop the image exposed by the exposure apparatus; and
an inspection apparatus configured to measure a property of a substrate on which a marker has been printed by the exposure apparatus using a mask containing a pattern, the pattern comprising a two-dimensional array of structures arranged such that the marker includes repeating structures formed by repeated exposure of the pattern, such that the structures along an x direction of the two-dimensional array are sensitive to dose variations, but are not sensitive to focus variations, and the structures along a y direction of the two-dimensional array are sensitive to both dose and focus variations, the inspection apparatus comprising,
a radiation source,
a projection system configured to direct radiation from the radiation source onto the marker,
a detector configured to detect radiation reflected from the marker, and
a processor configured to determine properties of the reflected radiation and, from the properties of the reflected radiation, determine at least one of focus and dose related properties of the exposure apparatus used to print the marker.

10. The lithographic cell according to claim 9 , wherein the processor is configured to determine the at least one of focus and dose related properties of the exposure apparatus by comparing the reflected radiation with a library of at least one of previously measured, simulated and extrapolated relationships between properties of the reflected radiation and the at least one of focus and dose related properties.

11. The lithographic cell of claim 9 , wherein the radiation directed onto the marker has an annular shape, such that diffraction of the radiation due to the marker in the y-direction is discernable from diffraction of the radiation due to the marker in the x-direction.

Assignees

• Asml Netherlands Bv

Inventors

• Leewis Christian Marinus
• Cramer Hugo Augustinus Joseph
• Van De Kerkhof Marcus Adrianus
• Quaedackers Johannes Anna
• Mattheus Christine Corinne

Classifications

• G03F7/70683

  Mark designs · CPC title

• G03F7/70675

  Latent image, i.e. measuring the image of the exposed resist prior to development · CPC title

• G03F7/70641 Primary

  Focus · CPC title

• G03F7/70608

  Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist · CPC title

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title