Device and method for continuous chemical vapour deposition under atmospheric pressure and use thereof

Patent metadata

Field	Value
Publication number	US-9683289-B2
Application number	US-201414488750-A
Country	US
Kind code	B2
Filing date	Sep 17, 2014
Priority date	Sep 23, 2005
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

A device and a method for continuous chemical vapor deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

First claim

The invention claimed is:

1. A method for continuous chemical vapour deposition under atmospheric pressure on substrates, comprising:
providing a device containing a reaction chamber, the reaction chamber having:
front and rear side walls facing one another in an opposing spaced-apart configuration along a longitudinal axis,
first and second side walls coupled to the front and rear walls and facing one another in an opposing spaced-apart configuration along a first lateral axis, the first lateral axis being transverse to the longitudinal axis, such that the front, rear, first and second side walls define an interior volume of the reaction chamber,
first and second openings into the interior volume of the reaction chamber and being oriented in an opposing spaced-apart configuration along a second lateral axis, the second lateral axis being transverse to both the first lateral axis and the longitudinal axis, and
at least two pair of gas inlets/outlets, including: (i) a first gas inlet disposed through the first side wall, and a first gas outlet disposed through the second side wall, and (ii) a second gas inlet disposed through the second side wall, and a second gas outlet disposed through the first side wall;
transporting at least first and second substrates to be treated past the reaction chamber in a transport direction parallel to the longitudinal axis, such that the respective substrates temporarily close off the first and second openings, respectively, thereby defining a closed internal volume of the reaction chamber and receiving deposition gas via the at least two pair of gas inlets/outlets; and
controlling a gas supply such that, during the deposition on the substrates, parasitic depositions in the device are prevented and/or removed at the same time.

2. The method according to claim 1 , further comprising supplying at least one precursor via at least one of the gas inlets.

3. The method according to claim 1 , further comprising suctioning gas out of the device via at least one of the gas outlets.

4. The method according to claim 3 , wherein the suctioning-off is effected via a pump.

5. The method according to claim 1 , wherein, by means of periodic change of a composition of the at least one supplied gas, parasitic depositions in the device are prevented and/or removed.

6. The method according to claim 1 , further comprising removing parasitic depositions in the device by supplying at least one etching gas.

7. The method according to claim 6 , wherein the at least one precursor and the at least one etching gas are supplied via the same gas inlets.

8. The method according to claim 6 , further comprising supplying the at least one precursor and the at least one etching gas to the device periodically alternating via different gas inlets.

9. The method according to claim 6 , wherein the at least one precursor and the at least one etching gas are chemically compatible with each other.

10. The method according to claim 1 , further comprising supplying at least one etching gas for removing parasitic depositions via at least one of the gas inlets.

11. The method according to claim 10 , further comprising supplying the at least one etching gas separately via at least one of the gas inlets.

12. The method according to claim 1 , further comprising:
guiding a first gas flow from one of the gas inlets in the first side wall towards one of the gas outlets in the second side wall; and
guiding in parallel thereto a second gas flow from one of the gas inlets in the second side wall towards one of the gas outlets in the first side wall in a counter-flow principle.

13. The method according to claim 1 , further comprising: directing the nozzles of the gas inlet pipes for the at least one precursor towards the substrates so that a gas flow is produced in the direction of the substrates.

14. The method according to claim 1 , further comprising directing the nozzles of the gas inlet pipes for the at least one etching gas towards the surfaces of the device with parasitic depositions so that the parasitic depositions are etched back.

15. The method according to claim 1 , further comprising supplying different process gases in each block so that different layers or layer compositions are deposited.

16. The method according to claim 1 , further comprising providing slots between delimitations of the process chamber and the substrates, such that dimensions of the slots between the delimitations of the process chamber and the substrates do not change substantially temporally.

17. The method according to claim 1 , further comprising providing slots between delimitations of the process chamber and the substrates, such that dimensions of the slots between the delimitations of the process chamber and the substrates change periodically.

Assignees

• Fraunhofer Ges Forschung

Inventors

• Reber Stefan
• Hurrle Albert
• Schillinger Norbert

Classifications

• C23C16/4412 Primary

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title

• C23C16/4405 Primary

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• C23C16/45502

  Flow conditions in reaction chamber · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title