Monomer for hardmask composition, hardmask composition including the monomer, and method of forming patterns using the hardmask composition

Patent metadata

Field	Value
Publication number	US-9683114-B2
Application number	US-201514609824-A
Country	US
Kind code	B2
Filing date	Jan 30, 2015
Priority date	Mar 19, 2014
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1:

First claim

What is claimed is:

1. A monomer for a hardmask composition, the monomer being represented by one of the following Chemical Formulae A to D:

2. A hardmask composition, comprising:
a solvent; and
a monomer represented by the following Chemical Formula 1:

wherein, in Chemical Formula 1,
A, B, and B′ are each independently a substituted aromatic ring-containing moiety,
L and L′ are each independently —C(═O)NH—, or —C(H)═N—,
X and X′ are each independently hydrogen, a hydroxy group, or an unsubstituted amino group, and
Y and Y′ are each independently hydrogen,
wherein, when the hardmask composition is heat-treated at about 100 to about 500° C. for about 60 seconds to about 20 minutes, the monomer forms a structure represented by one of the following Chemical Formulae 6 to 9:

3. The hardmask composition as claimed in claim 1 , wherein the monomer is included in the composition in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the hardmask composition.

4. A method of forming patterns, the method comprising:
providing a material layer on a substrate,
applying the hardmask composition as claimed in claim 1 on the material layer,
heat-treating the hardmask composition to form a hardmask layer,
forming a silicon-containing thin layer on the hardmask layer,
forming a photoresist layer on the silicon-containing thin layer,
exposing and developing the photoresist layer to form a photoresist pattern;
selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and
etching an exposed part of the material layer.

5. The method as claimed in claim 4 , wherein applying the hardmask composition includes spin-on coating.

6. The method as claimed in claim 4 , wherein heat-treating the hardmask composition to form the hardmask layer includes heat-treating at about 100° C. to about 500° C.

7. The method as claimed in claim 4 , further comprising forming a bottom antireflective coating on the silicon-containing thin layer.

8. The method as claimed in claim 4 , wherein the silicon-containing thin layer includes silicon oxynitride.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Kim Hea-Jung
• Kim Sung-Hwan
• Nam Youn-Hee
• Kim Yun-Jun
• Moon Joon-Young
• Song Hyun-Ji
• Yoon Yong-Woon
• Lee Chung-Heon

Classifications

• C07C2103/24

  Chemistry & Metallurgy · mapped topic

• C07C2103/50

  Chemistry & Metallurgy · mapped topic

• C07C233/80 Primary

  with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• C09D7/1233 Primary

  Chemistry & Metallurgy · mapped topic