Resist composition, method for forming resist pattern, photo-reactive quencher and compound

US9671690B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9671690-B2
Application numberUS-201615072036-A
CountryUS
Kind codeB2
Filing dateMar 16, 2016
Priority dateMar 24, 2015
Publication dateJun 6, 2017
Grant dateJun 6, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X − represents a counter anion.

First claim

Opening claim text (preview).

What is claimed is: 1. A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid, the composition comprising: a base material component (A) whose solubility in a developing solution changes under the action of an acid; an acid generator component (B) which generates an acid upon exposure; and a photo-reactive quencher (D0) which contains a compound (D0-1) represented by general formula (d0) shown below: wherein Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent, Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent, and X − represents a counter anion represented by any one of general formulae (d1-1) to (d1-3) shown below: wherein Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, provided that two or more of fluorine atoms are not bonded to a carbon atom adjacent to an S atom in Rd 2 in formula (d1-2); and Yd 1 represents a single bond or a divalent linking group. 2. A method for forming a resist pattern, comprising: forming a resist film using the resist composition according to claim 1 on a support; exposing the resist film to light; and developing the resist film to form a resist pattern. 3. A photo-reactive quencher comprising a compound (D0-1) represented by general formula (d0) shown below: wherein Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent, Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent, and X − represents a counter anion represented by any one of formulae (d1-1) to (d1-3) shown below; wherein Rd 1 to Rd 4 represent a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, provided that two or more of fluorine atoms are not bonded to a carbon atom adjacent to an S atom in Rd 2 in formula (d1-2); and Yd 1 represents a single bond or a divalent linking group. 4. A compound represented by general formula (d0) below: wherein Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent, Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent, and X − represents a counter anion represented by any one of formulae (d1-1) to (d1-3) shown below: wherein Rd 1 to Rd 4 represent a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, provided that two or more of fluorine atoms are not bonded to a carbon atom adjacent to an S atom in Rd 2 in formula (d1-2); and Yd 1 represents a single bond or a divalent linking group.

Assignees

Inventors

Classifications

  • containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton · CPC title

  • G03F7/0045Primary

    with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

  • with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

  • having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton · CPC title

  • o-Hydroxy carboxylic acids · CPC title

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What does patent US9671690B2 cover?
A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound re…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jun 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).