Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
US9671690B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9671690-B2 |
| Application number | US-201615072036-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 16, 2016 |
| Priority date | Mar 24, 2015 |
| Publication date | Jun 6, 2017 |
| Grant date | Jun 6, 2017 |
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A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X − represents a counter anion.
Opening claim text (preview).
What is claimed is: 1. A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid, the composition comprising: a base material component (A) whose solubility in a developing solution changes under the action of an acid; an acid generator component (B) which generates an acid upon exposure; and a photo-reactive quencher (D0) which contains a compound (D0-1) represented by general formula (d0) shown below: wherein Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent, Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent, and X − represents a counter anion represented by any one of general formulae (d1-1) to (d1-3) shown below: wherein Rd 1 to Rd 4 each independently represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, provided that two or more of fluorine atoms are not bonded to a carbon atom adjacent to an S atom in Rd 2 in formula (d1-2); and Yd 1 represents a single bond or a divalent linking group. 2. A method for forming a resist pattern, comprising: forming a resist film using the resist composition according to claim 1 on a support; exposing the resist film to light; and developing the resist film to form a resist pattern. 3. A photo-reactive quencher comprising a compound (D0-1) represented by general formula (d0) shown below: wherein Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent, Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent, and X − represents a counter anion represented by any one of formulae (d1-1) to (d1-3) shown below; wherein Rd 1 to Rd 4 represent a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, provided that two or more of fluorine atoms are not bonded to a carbon atom adjacent to an S atom in Rd 2 in formula (d1-2); and Yd 1 represents a single bond or a divalent linking group. 4. A compound represented by general formula (d0) below: wherein Ra 1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent, Ra 2 and Ra 3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent, and X − represents a counter anion represented by any one of formulae (d1-1) to (d1-3) shown below: wherein Rd 1 to Rd 4 represent a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, provided that two or more of fluorine atoms are not bonded to a carbon atom adjacent to an S atom in Rd 2 in formula (d1-2); and Yd 1 represents a single bond or a divalent linking group.
containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton · CPC title
with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title
with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title
having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton · CPC title
o-Hydroxy carboxylic acids · CPC title
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