Method for recharging raw material polycrystalline silicon

Patent metadata

Field	Value
Publication number	US-9670593-B2
Application number	US-201113329368-A
Country	US
Kind code	B2
Filing date	Dec 19, 2011
Priority date	Dec 28, 2010
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks.

First claim

What is claimed is:

1. A method for recharging raw material polycrystalline silicon to a residual silicon melt in the CZ process for producing a silicon single crystal ingot, wherein a filling step of filling raw material polycrystalline silicon into a crucible, a melting step of melting filled polycrystalline silicon in the crucible to form a silicon melt, and a pulling-up step of bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to thereby grow a silicon single crystal ingot is used, and wherein further raw material polycrystalline silicon is supplied into the crucible after the melting step and the pulling-up step, the method comprising forming a cushioning region by introducing middle-sized polycrystalline silicon chunks having sizes of 20 mm to 50 mm and a maximum width h of 50 mm to the surface of the silicon melt in the crucible, and subsequently supplying large polycrystalline silicon chunks larger in size than the middle-sized polycrystalline silicon chunks onto the cushioning region, wherein the cushioning region entirely covers the surface of the silicon melt prior to supplying the large silicon chunks.

2. The method for recharging raw material polycrystalline silicon of claim 1 , wherein a recharge device comprising a main body having a passageway running through it and a lid body enabling one end of the main body to be opened and closed, is used to supply the raw material polycrystalline silicon to the silicon melt in the crucible.

3. The method for recharging raw material polycrystalline silicon of claim 2 , wherein the large polycrystalline silicon chunks have sizes which allow the large polycrystalline silicon chunks to pass through the passageway of the main body, and which are larger than 50 mm.

4. The method of claim 3 , where at least some of the large polycrystalline silicon chunks have a size of 100 mm or more.

5. The method of claim 3 , where at least some of the large polycrystalline silicon chunks have a size of 150 mm or more.

6. The method of claim 3 , where at least some of the large polycrystalline silicon chunks have a size of 200 mm or more.

7. A method for recharging raw material polycrystalline silicon of claim 2 , wherein one end of the main body of the recharge device is closed by the lid body, the middle-sized polycrystalline silicon chunks are filled into the main body, the large polycrystalline silicon chunks are filled onto the middle-sized polycrystalline silicon chunks filled into the main body, and the lid body is opened to supply the raw material polycrystalline silicon to the silicon melt in the crucible.

8. The method of claim 1 , wherein at least some of the large polycrystalline silicon chunks are larger than 50 mm.

9. A method for recharging raw material polycrystalline silicon to a residual silicon melt in the CZ process for producing a silicon single crystal ingot, wherein a filling step of filling raw material polycrystalline silicon into a crucible, a melting step of melting filled polycrystalline silicon in the crucible to form a silicon melt, and a pulling-up step of bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to thereby grow a silicon single crystal ingot is used, and wherein further raw material polycrystalline silicon is supplied into the crucible after the melting step and the pulling-up step, the method comprising forming a cushioning region by introducing middle-sized polycrystalline silicon chunks having sizes of 40 mm to 50 mm and a maximum width h of 50 mm to the surface of the silicon melt in the crucible, and subsequently supplying polycrystalline silicon chunks larger in size than the middle-sized polycrystalline silicon chunks onto the cushioning region, wherein the cushioning region entirely covers the surface of the silicon melt.

10. A method for recharging raw material polycrystalline silicon to a residual silicon melt in the CZ process for producing a silicon single crystal ingot, wherein a filling step of filling raw material polycrystalline silicon into a crucible, a melting step of melting filled polycrystalline silicon in the crucible to form a silicon melt, and a pulling-up step of bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to thereby grow a silicon single crystal ingot is used, and wherein further raw material polycrystalline silicon is supplied into the crucible after the melting step and the pulling-up step, the method comprising forming a cushioning region by introducing middle-sized polycrystalline silicon chunks having sizes of 40 mm to 50 mm and a maximum width h of 50 mm to the surface of the silicon melt in the crucible, and subsequently supplying polycrystalline silicon chunks larger in size than 60 mm onto the cushioning region, wherein the cushioning region entirely covers the surface of the silicon melt.

Assignees

• Kato Hideo
• Yoshimura Satoko
• Ninomiya Takeshi
• Siltronic Ag

Inventors

• Kato Hideo
• Yoshimura Satoko
• Ninomiya Takeshi

Classifications

• C30B11/001

  Continuous growth · CPC title

• Y10T117/1056

  including details of precursor replenishment · CPC title

• C30B15/02

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• C30B15/002

  Continuous growth · CPC title

• C30B29/06 Primary

  Silicon · CPC title