Plasma processing device

Patent metadata

Field	Value
Publication number	US-9670584-B2
Application number	US-201214118993-A
Country	US
Kind code	B2
Filing date	May 21, 2012
Priority date	May 23, 2011
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A plasma processing device including a stage for holding a substrate, a processing vessel, a first supply unit, a masking portion, a dielectric member, a microwave introduction unit, and a second supply unit. The first supply unit supplies a first process gas for layer deposition to the processing space. The masking portion is electrically conductive and has a first surface facing the processing space, a second surface at an opposite side, and one or more through holes extending from the first surface to the second surface. The dielectric member is in contact with the second surface of the masking portion, and is formed with one or more cavities connected to the one or more through holes. The microwave introduction unit introduces microwaves to the dielectric member. The second supply unit supplies a second process gas for plasma processing into the cavities of the dielectric member.

First claim

What is claimed is:

1. A plasma processing device, comprising:
a stage;
a processing vessel configured to define a processing space above the stage;
a first supply unit configured to supply a first process gas for layer deposition to the processing space;
a masking portion electrically conductive and including a first surface facing the processing space, a second surface opposite to the first surface, and one or more through holes;
a dielectric member provided to be in contact with the second surface of the masking portion and including one or more cavities connected to the one or more through holes;
a microwave introduction unit configured to introduce microwaves to the dielectric member; and
a second supply unit configured to supply a second process gas for plasma processing into the one or more cavities of the dielectric member,
whereby a plasma is generated in the one or more cavities,
wherein the microwave introduction unit includes a slot plate which is made of metal, and
wherein the dielectric member constitutes a dielectric window provided between the slot plate and the masking portion, the dielectric window being configured to transmit microwaves therethrough.

2. The plasma processing device of claim 1 , wherein the one or more cavities are one or more columnar spaces formed in the dielectric member.

3. The plasma processing device of claim 1 , wherein the one or more cavities are one or more annular grooves formed in the dielectric member.

4. The plasma processing device of claim 1 , wherein the dielectric member is formed with a communication path that is configured to communicate between at least two among the plural cavities.

5. The plasma processing device of claim 1 , wherein the microwave introduction unit further includes a coaxial waveguide.

6. The plasma processing device of claim 5 , wherein the coaxial waveguide is coupled with the masking portion through the dielectric member.

7. The plasma processing device of claim 5 , wherein the the slot plate being coupled with the coaxial waveguide and formed with a plurality of slots in a circumferential direction and a radial direction.

8. The plasma processing device of claim 1 , wherein a cross-sectional area of each of the one or more through holes is smaller than a cross-sectional area of the one or more cavities.

9. The plasma processing device of claim 1 , wherein the one or more through holes are plural through holes connected to one cavity.

10. The plasma processing device of claim 1 , wherein a distance between a placing surface of the stage on which a substrate to be processed is placed, and the first surface ranges from 5 mm to 40 mm.

11. The plasma processing device of claim 1 , wherein the masking portion and the dielectric member are provided at a lateral side of the processing space.

12. The plasma processing device of claim 11 , wherein a distance between the stage and the first surface is set such that a shortest distance between the first surface and an edge of the substrate mounted on the stage ranges from 5 mm to 60 mm.

13. A plasma processing device, comprising:
a stage;
a processing vessel configured to define a processing space above the stage;
a first supply unit configured to supply a first process gas for layer deposition to the processing space;
a masking portion electrically conductive and including a first surface facing the processing space, a second surface opposite to the first surface, and one or more through holes;
a dielectric member provided on a side of the second surface of the masking portion and including one or more cavities connected to the one or more through holes;
a microwave introduction unit configured to introduce microwaves to the dielectric member; and
a second supply unit configured to supply a second process gas for generating a plasma into the one or more cavities of the dielectric member,
wherein the masking portion is configured
to separate a plasma generating space from the processing space,
to pass radicals generated in the one or more cavities to the processing space via the one or more through holes, and
to shield the plasma generated in the one or more cavities against the processing space,
wherein the microwave introduction unit includes a slot plate which is made of metal, and
wherein the dielectric member constitutes a dielectric window provided between the slot plate and the masking portion, the dielectric window being configured to transmit microwaves therethrough.

14. A plasma processing device, comprising:
a stage;
a processing vessel configured to define a processing space above the stage;
a first supply unit configured to supply a first process gas for layer deposition to the processing space;
a masking portion electrically conductive and including a first surface facing the processing space, a second surface opposite to the first surface, and one or more through holes;
a dielectric member provided on a side of the second surface of the masking portion and including one or more cavities connected to the one or more through holes;
a microwave introduction unit configured to introduce microwaves to the dielectric member; and
a second supply unit configured to supply a second process gas for generating a plasma into the one or more cavities of the dielectric member, wherein
the masking portion is configured to separate a plasma generating space from the processing space, and
a distance between a placing surface of the stage for mounting a substrate and the first surface is from 5 mm to 40 mm,
wherein the microwave introduction unit includes a slot plate which is made of metal, and
wherein the dielectric member constitutes a dielectric window provided between the slot plate and the masking portion, the dielectric window being configured to transmit microwaves therethrough.

Assignees

• Ishibashi Kiyotaka
• Tokyo Electron Ltd

Inventors

• Ishibashi Kiyotaka

Classifications

• H01J37/32229

  Waveguides · CPC title

• H01J37/32192

  Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title

• C23C16/511 Primary

  using microwave discharges · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• H01J37/3244

  Gas supply means · CPC title