Silicon carbide semiconductor device and method for manufacturing same
US-2016111499-A1 · Apr 21, 2016 · US
Method of manufacturing silicon carbide semiconductor device
US2016240380A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016240380-A1 |
| Application number | US-201415024345-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 5, 2014 |
| Priority date | Sep 25, 2013 |
| Publication date | Aug 18, 2016 |
| Grant date | — |
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Abstract
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A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a second main surface located opposite to the first main surface, a step of forming a doped region in the silicon carbide substrate by doping the first main surface with an impurity, a step of forming a first protecting film on the first main surface, and a step of forming a second protecting film on the second main surface, the step of forming a first protecting film being performed after the step of forming a doped region, the method further including a step of activating the impurity included in the doped region by annealing with at least a portion of the first main surface covered with the first protecting film and at least a portion of the second main surface covered with the second protecting film.
First claim
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1 . A method of manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a silicon carbide substrate having a first main surface and a second main surface located opposite to the first main surface; forming a doped region in the silicon carbide substrate by doping the first main surface with an impurity; forming a first protecting film on the first main surface; and forming a second protecting film on the second main surface, the step of forming a first protecting film being performed after the step of forming a doped region, and the method further comprising the step of activating the impurity included in the doped region by annealing with at least a portion of the first main surface being covered with the first protecting film and at least a portion of the second main surface being covered with the second protecting film. 2 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein at least one of the first protecting film and the second protecting film is an organic film. 3 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein at least one of the first protecting film and the second protecting film is a diamond-like carbon film. 4 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein at least one of the first protecting film and the second protecting film is a carbon layer. 5 . The method of manufacturing a silicon carbide semiconductor device according to claim 4 , wherein the carbon layer is formed by partially removing silicon from the silicon carbide substrate. 6 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein the second protecting film covers the entire second main surface. 7 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein a plurality of the silicon carbide substrates are prepared in the preparing step, and in the activating step, the plurality of the silicon carbide substrates are annealed while being held with spacing between each of the substrates along a direction intersecting with the first main surface. 8 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein the silicon carbide substrate has a diameter greater than or equal to 100 mm. 9 . The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein the silicon carbide substrate has a thickness less than or equal to 600 μm.
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Classifications
being crystalline silicon carbide · CPC title
into crystalline silicon carbide · CPC title
of electrically active species · CPC title
composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title
Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title
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- What does patent US2016240380A1 cover?
- A method of manufacturing a silicon carbide semiconductor device includes a step of preparing a silicon carbide substrate having a first main surface and a second main surface located opposite to the first main surface, a step of forming a doped region in the silicon carbide substrate by doping the first main surface with an impurity, a step of forming a first protecting film on the first main …
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification H10P30/22. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 18 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).