Substrate processing apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9659767-B2
Application number	US-201414500338-A
Country	US
Kind code	B2
Filing date	Sep 29, 2014
Priority date	Jan 30, 2014
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber; and
(b) supplying a process gas into the process chamber via a buffer chamber to process the substrate,
wherein the process gas and an inert gas are supplied into the buffer chamber through a process gas supply hole and an inert gas supply hole disposed in a ceiling portion of the buffer chamber in (b), and
the process gas and the inert gas, supplied into the buffer chamber, are then supplied into the process chamber via a gas guide disposed between the process gas supply hole and the inert gas supply hole and a dispersion unit constituting a lower portion of the buffer chamber.

2. A substrate processing apparatus comprising:
a process chamber configured to process a substrate;
a buffer chamber installed above the process chamber, the buffer chamber including a dispersion unit configured to uniformly supply gases into the process chamber;
a process gas supply hole installed in a ceiling portion of the buffer chamber with a process gas supply unit is connected to an upstream side thereof in a gas supply direction;
an inert gas supply hole installed in a wall defining the buffer chamber with an inert gas supply unit is connected to an upstream side thereof in the gas supply direction;
a gas guide disposed between the process gas supply hole and the inert gas supply hole;
a process chamber exhaust unit installed below the process chamber and configured to exhaust an atmosphere of the process chamber; and
a control unit configured to control at least the process gas supply unit, the inert gas supply unit, and the process chamber exhaust unit.

3. The apparatus of claim 2 , wherein the gas guide has a circumferential shape with the process gas supply hole as a center of the circumferential shape.

4. The apparatus of claim 3 , wherein the control unit control is configured to control the process gas supply unit and the inert gas supply unit in a manner that a flow rate of gases supplied through the process gas supply hole is higher than that of an inert gas supplied through the inert gas supply hole.

5. The apparatus of claim 4 , further comprising a buffer chamber exhaust unit connected to the buffer chamber and configured to exhaust an atmosphere of the buffer chamber,
wherein the control unit is configured to control the buffer chamber exhaust unit and the inert gas supply unit in a manner that the atmosphere of the buffer chamber is exhausted after stopping a supply of the gases through the process gas supply hole by supplying the inert gas through the inert gas supply hole at an amount greater than an amount of the inert gas supplied through the inert gas supply hole when the gases are supplied through the process gas supply hole.

6. The apparatus of claim 3 , wherein the gases supplied through the process gas supply hole include at least one of a source gas and a reactive gas reactive with the source gas, and the control unit is configured to control the process gas supply unit and the inert gas supply unit in a manner that a flow rate of the gases containing the source gas supplied through the process gas supply hole is higher than that of the inert gas supplied through the inert gas supply hole.

7. The apparatus of claim 3 , wherein the gases supplied through the process gas supply hole include at least one of a source gas and a reactive gas reactive with the source gas, and the control unit is configured to control the process gas supply unit and the inert gas supply unit in a manner that a flow rate of the gases containing the reactive gas supplied through the process gas supply hole is higher than that of the inert gas supplied through the inert gas supply hole.

8. The apparatus of claim 7 , further comprising a buffer chamber exhaust unit connected to the buffer chamber and configured to exhaust an atmosphere of the buffer chamber,
wherein the control unit is configured to control the buffer chamber exhaust unit and the inert gas supply unit in a manner that the atmosphere of the buffer chamber is exhausted after stopping a supply of the gases containing the reactive gas through the process gas supply hole by supplying the inert gas through the inert gas supply hole at an amount greater than that of the inert gas supplied through the inert gas supply hole when the gases containing the reactive gas are supplied through the process gas supply hole.

9. The apparatus of claim 2 , wherein the control unit is configured to control the process gas supply unit and the inert gas supply unit in a manner that a flow rate of gases supplied through the process gas supply hole is higher than that of an inert gas supplied through the inert gas supply hole.

10. The apparatus of claim 9 , further comprising a buffer chamber exhaust unit connected to the buffer chamber and configured to exhaust an atmosphere of the buffer chamber,
wherein the control unit is configured to control the buffer chamber exhaust unit and the inert gas supply unit in a manner that the atmosphere of the buffer chamber is exhausted after stopping a supply of the gases through the process gas supply hole by supplying the inert gas through the inert gas supply hole at an amount greater than an amount of the inert gas supplied through the inert gas supply hole when the gases are supplied through the process gas supply hole.

11. The apparatus of claim 2 , wherein the gases supplied through the process gas supply hole include at least one of a source gas and a reactive gas reactive with the source gas, and the control unit is configured to control the process gas supply unit and the inert gas supply unit in a manner that a flow rate of the gases containing the source gas supplied through the process gas supply hole is higher than that of the inert gas supplied through the inert gas supply hole.

12. The apparatus of claim 11 , further comprising a buffer chamber exhaust unit connected to the buffer chamber and configured to exhaust an atmosphere of the buffer chamber,
wherein the control unit is configured to control the buffer chamber exhaust unit and the inert gas supply unit in a manner that the atmosphere of the buffer chamber is exhausted after stopping a supply of the gases containing the source gas through the process gas supply hole by supplying the inert gas through the inert gas supply hole at an amount greater than that of the inert gas supplied through the inert gas supply hole when the gases containing the source gas are supplied through the process gas supply hole.

13. The apparatus of claim 2 , wherein the gases supplied through the process gas supply hole include at least one of a source gas and a reactive gas reactive with the source gas, and the control unit is configured to control the process gas supply unit and the inert gas supply unit in a manner that a flow rate of the gases containing the reactive gas supplied through the process gas supply hole is higher than that of the inert gas supplied through the inert gas supply hole.

14. The apparatus of claim 13 , further comprising a buffer chamber exhaust unit connected to the buffer chamber and configured to exhaust an atmosphere of the buffer chamber,
wherein the control unit is configured to control the buffer chamber exhaust unit and the inert gas supply unit in a manner that the atmosphere of the buffer chamber is exhausted after stopping a supply of the gases containing the reactive gas through the process gas supply hole by supplying the inert gas through the inert gas supply hole at an amount greater than that of the inert gas supplied through the inert gas supply hole

Assignees

• Hitachi Int Electric Inc

Inventors

• Yanai Hidehiro
• Ashihara Hiroshi
• Sano Atsushi
• Takasaki Tadashi

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/00

  Formation of materials, e.g. in the shape of layers or pillars · CPC title