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Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9070554B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9070554-B2 |
| Application number | US-201414495388-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 24, 2014 |
| Priority date | Sep 30, 2013 |
| Publication date | Jun 30, 2015 |
| Grant date | Jun 30, 2015 |
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Abstract
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A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas, after the act of supplying the high frequency power to the plasma generation region is initiated, by supplying the reaction gas to the plasma generation region and adjusting a pressure in t…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/6336Primary
Electricity · mapped topic
- H10P72/0402Primary
Electricity · mapped topic
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- What does patent US9070554B2 cover?
- A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the press…
- Who is the assignee on this patent?
- Hitachi Int Electric Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6336. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 30 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).