Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
US-2015380500-A1 · Dec 31, 2015 · US
US9658350B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9658350-B2 |
| Application number | US-201514729715-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 3, 2015 |
| Priority date | Oct 23, 2012 |
| Publication date | May 23, 2017 |
| Grant date | May 23, 2017 |
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A radiation detection device, including: a support structure; and a chalcopyrite crystal coupled to the support structure; wherein, when the chalcopyrite crystal is exposed to radiation, a visible spectrum of the chalcopyrite crystal changes from an initial color to a modified color. The visible spectrum of the chalcopyrite crystal is changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. The chalcopyrite crystal is optionally a 6 LiInSe 2 crystal. The radiation is comprised of neutrons that decrease the 6 Li concentration of the chalcopyrite crystal via a 6 Li(n,α) reaction. The initial color is yellow and the modified color is one of orange and red. The annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs.
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What is claimed is: 1. A passive radiation detection device, comprising: a support structure; and a chalcopyrite crystal coupled to the support structure; wherein, when the chalcopyrite crystal coupled to the support structure is subsequently exposed to radiation, a visible spectrum of the chalcopyrite crystal coupled to the support structure changes from an initial color to a modified color. 2. The radiation detection device of claim 1 , wherein the visible spectrum of the chalcopyrite crystal is changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below the melting point of the chalcopyrite crystal over time. 3. The radiation detection device of claim 2 , wherein the annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs. 4. The radiation detection device of claim 1 , wherein the chalcopyrite crystal comprises a 6 LiInSe 2 crystal. 5. The radiation detection device of claim 4 , wherein neutrons in the radiation decrease the 6 Li concentration of the chalcopyrite crystal via a 6 Li(n,α) reaction. 6. The radiation detection device of claim 4 , wherein the initial color is yellow and the modified color is one of orange and red. 7. A passive radiation detection method, comprising: providing a support structure; and coupling a chalcopyrite crystal to the support structure; wherein, when the chalcopyrite crystal coupled to the support structure is subsequently exposed to radiation, a visible spectrum of the chalcopyrite crystal coupled to the support structure changes from an initial color to a modified color. 8. The radiation detection method of claim 7 , wherein the visible spectrum of the chalcopyrite crystal is configured to be changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below the melting point of the chalcopyrite crystal over time. 9. The radiation detection method of claim 8 , wherein the annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs. 10. The radiation detection method of claim 7 , wherein the chalcopyrite crystal comprises a 6 LiInSe 2 crystal. 11. The radiation detection method of claim 10 wherein neutrons in the radiation decrease the 6 Li concentration of the chalcopyrite crystal via a 6 Li(n,α) reaction. 12. The radiation detection method of claim 10 , wherein the initial color is yellow and the modified color is one of orange and red. 13. A method for using a passive radiation detection device, comprising: providing a support structure; providing a chalcopyrite crystal coupled to the support structure; subsequently exposing the chalcopyrite crystal coupled to the support structure to radiation such that a visible spectrum of the chalcopyrite crystal coupled to the support structure changes from an initial color to a modified color; and changing the visible spectrum of the chalcopyrite crystal back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. 14. The method of claim 13 , wherein the chalcopyrite crystal comprises a 6 LiInSe 2 crystal. 15. The method of claim 14 , wherein neutrons in the radiation decrease the 6 Li concentration of the chalcopyrite crystal via a 6 Li(n,α) reaction. 16. The method of claim 14 , wherein the initial color is yellow and the modified color is one of orange and red. 17. The method of claim 13 , wherein the annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs. 18. A method for recharging a passive radiation detection device comprising a chalcopyrite crystal coupled to a support structure that has subsequently been exposed to radiation such that a visible spectrum of the chalcopyrite crystal coupled to the support structure has changed from an initial color to a modified color, the method comprising: changing the visible spectrum of the chalcopyrite crystal back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. 19. The method of claim 18 , wherein the chalcopyrite crystal comprises a 6 LiInSe 2 crystal. 20. The method of claim 19 , wherein neutrons in the radiation decrease the 6 Li concentration of the chalcopyrite crystal via a 6 Li(n,α) reaction. 21. The method of claim 19 , wherein the initial color is yellow and the modified color is one of orange and red. 22. The method of claim 18 , wherein the annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs.
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