System and method for semiconductor wafer inspection and metrology

Patent metadata

Field	Value
Publication number	US-9658150-B2
Application number	US-201614990233-A
Country	US
Kind code	B2
Filing date	Jan 7, 2016
Priority date	Jan 12, 2015
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A system determines a value, such as a thickness, surface roughness, material concentration, and/or critical dimension, of a layer on a wafer based on normalized signals and reflected total intensities. A light source directs a beam at a surface of the wafer. A sensor receives the reflected beam and provides at least a pair of polarization channels. The signals from the polarization channels are received by a controller, which normalizes a difference between a pair of the signals to generate the normalized result. The value of the wafer is determined through analyzing the signal with a modeling of the system.

First claim

What is claimed is:

1. A system comprising:
a stage configured to hold a wafer;
a light source configured to direct a beam at a surface of the wafer on the stage;
a sensor configured to receive the beam reflected off the surface and provide at least two polarization channels, each of the polarization channels providing a signal; and
a controller in electronic communication with the sensor, wherein the controller is configured to:
receive the signal from each of the polarization channels;
normalize a difference between a pair of the signals to generate a normalized result; and
determine a value of a layer on the wafer based on the normalized result and a total intensity of the pair of the signals, wherein the value is one of a thickness, a surface roughness, a material concentration, or a critical dimension.

2. The system of claim 1 , wherein the sensor is a polarization sensitive detector.

3. The system of claim 1 , wherein the sensor is configured to provide six of the polarization channels and wherein the sensor includes:
a first beam splitter;
a second beam splitter configured to receive light from the first beam splitter;
a first polarizing beam splitter configured to receive light from the first beam splitter, wherein the first polarizing beam splitter is configured to generate two of the six polarization channels;
a second polarizing beam splitter configured to receive light from the second beam splitter, wherein the second polarizing beam splitter is configured to generate two of the six polarization channels; and
a third polarizing beam splitter configured to receive light from the second beam splitter, wherein the third polarizing beam splitter is configured to generate two of the six polarization channels.

4. The system of claim 3 , wherein the first beam splitter is a 30/70 beam splitter.

5. The system of claim 3 , wherein the second beam splitter is a 50/50 beam splitter.

6. The system of claim 3 , wherein the second polarizing beam splitter is at 45° and the third polarizing beam splitter is at 0° with respect to an incident plane.

7. The system of claim 3 , further comprising a quarter waveplate disposed between the first beam splitter and the first polarizing beam splitter.

8. The system of claim 3 , wherein the controller is further configured to normalize pairs of the signals to generate three of the normalized results and determine the value based on the three normalized results.

9. The system of claim 1 , wherein the controller is configured to normalize the difference between the pair of the signals using the formula V=(Pq−Sq)/(Pq+Sq), wherein Pq and Sq are the pair of the signals, V is the normalized result, and Sp=Pq+Sq is the total intensity.

10. The system of claim 1 , wherein each of the polarization channels is generated by a polarizing beam splitter.

11. The system of claim 1 , wherein the sensor is configured to provide four or fewer polarization channels of the beam reflected off the surface.

12. The system of claim 1 , wherein the light source is configured to direct the beam at a plurality of wavelengths, and wherein the light source is a tunable laser or a wavelength multiplex of a plurality of lasers working at different wavelengths.

13. The system of claim 1 , wherein the controller is configured to determine the value of the layer by fitting the pair of the signals or the normalized result with a nonlinear least square optimization algorithm.

14. A method comprising:
directing a beam from a light source at a surface of a wafer;
receiving the beam reflected off the surface with a sensor;
splitting the beam in the sensor into a plurality of polarization channels using at least one polarizing beam splitter;
generating a signal from each of the polarization channels;
normalizing a difference between a pair of the signals to generate a normalized result; and
determining a value of a layer on the wafer based on the normalized result and a total intensity of the pair of the signals, wherein the value is one of a thickness, a surface roughness, a material concentration, or a critical dimension.

15. The method of claim 14 , wherein the normalizing uses the formula V=(Pq−Sq)/(Pq+Sq), wherein Pq and Sq are the pair of the signals, V is the normalized result, and Sp=Pq+Sq is the total intensity.

16. The method of claim 14 , wherein the splitting further comprises splitting the beam into six of the polarization channels using three of the polarizing beam splitters.

17. The method of claim 16 , wherein the normalizing further comprises generating three of the normalized results.

18. The method of claim 14 , further comprising using a model to analyze the measured signals for determining the value of a layer on the wafer.

19. The method of claim 14 , wherein the beam is at a plurality of wavelengths, wherein the plurality of wavelengths is generated by a tunable laser or by a wavelength multiplex of a plurality of lasers working at different wavelengths.

20. The method of claim 14 , wherein the determining comprises fitting the pair of the signals or the normalized result with a nonlinear least square optimization algorithm.

Assignees

• Kla Tencor Corp

Inventors

• Li Shifang
• Wen Youxian

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/06

  Apparatus for monitoring, sorting, marking, testing or measuring · CPC title

• G01N2021/8848

  Polarisation of light · CPC title

• G01B11/303

  using photoelectric detection means · CPC title

• G01N2021/8845

  Multiple wavelengths of illumination or detection · CPC title